Method for generating and processing a uniform high density plasma sheet
US-2021327690-A1 · Oct 21, 2021 · US
US2020161108A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020161108-A1 |
| Application number | US-201916596109-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 8, 2019 |
| Priority date | Oct 29, 2018 |
| Publication date | May 21, 2020 |
| Grant date | — |
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In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
Opening claim text (preview).
What is claimed is: 1 . A magnetic assembly, comprising: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus. 2 . The magnetic assembly of claim 1 , wherein a tip of the peak region extends more toward the inner permeance annulus than other part of the outer permeance annulus. 3 . The magnetic assembly of claim 1 , wherein the peak region is aligned with one of the magnets along an axis that bisects the magnetic assembly. 4 . The magnetic assembly of claim 1 , wherein the peak region includes a width that is greatest among the outer permeance annulus. 5 . The magnetic assembly of claim 1 , wherein the peak region comprises a concave feature that faces a convex feature along the inner permeance annulus. 6 . The magnetic assembly of claim 1 , wherein the outer permeance annulus comprises a varying width in a first dimension and a uniform thickness is a second dimension orthogonal to the first dimension. 7 . The magnetic assembly of claim 1 , further comprising a permeance extension structure adhered to the peak region. 8 . The magnetic assembly of claim 1 , wherein the peak region comprises a permeance extension structure. 9 . A magnetic assembly comprising: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a concave feature and a convex feature; and a permeance extension structure adhered to the peak region. 10 . The magnetic assembly of claim 9 , wherein the magnetic assembly is configured to be disposed within a chamber and to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber. 11 . The magnetic assembly of claim 10 , wherein a target is disposed within the target region, and wherein the magnetic assembly is configured to rotate around the axis to generate the electromagnetic field with the ions that sputters the target. 12 . The magnetic assembly of claim 11 , wherein material sputtered from the target is deposited onto a wafer within the chamber. 13 . The magnetic assembly of claim 11 , wherein the electromagnetic field is configured to erode the target along an even gradient over time that avoids target puncture. 14 . The magnetic assembly of claim 11 , wherein the electromagnetic field is configured to sputter the target without a peak or trough along a surface of the target. 15 . The magnetic assembly of claim 9 , wherein the permeance extension structure is made of a same material as the outer permeance annulus. 16 . The magnetic assembly of claim 9 , wherein the permeance extension structure is made of a different material than the outer permeance annulus. 17 . A method, comprising: producing a magnetic field using a magnetic assembly contained within a chamber, the magnetic assembly comprising: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus; and sputtering a target disposed within the chamber using an electromagnetic field of ions controlled by the magnetic field, such that a material sputtered from the target is deposited onto a wafer within the chamber. 18 . The method of claim 17 , wherein the magnets are shaped with a U. 19 . The method of claim 17 , wherein the magnets each comprise a respective first end and a second end, wherein the inner permeance annulus is connected to the first end of the magnets and the outer permeance annulus at the second end of the magnets. 20 . The method of claim 19 , wherein the first end is a south pole and the second end is a north pole.
Magnetic means · CPC title
Electromagnets in particular for cathodic sputtering apparatus (electromagnets in general H01F7/06) · CPC title
Planar magnetron sputtering · CPC title
by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
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