Package structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2020105705-A1
Application number	US-201916252724-A
Country	US
Kind code	A1
Filing date	Jan 21, 2019
Priority date	Sep 27, 2018
Publication date	Apr 2, 2020
Grant date	—

Abstract

A package structure includes a substrate, a die, an adhesive layer, a dam structure, and an encapsulant. The die is disposed on the substrate. The adhesive layer is disposed between the substrate and the die. The adhesive layer has a curved surface. The dam structure is disposed on the substrate and surrounded by the adhesive layer. The encapsulant encapsulates the die.

First claim

1 . A package structure, comprising:
a substrate; a die disposed on the substrate; an adhesive layer disposed between the substrate and the die, wherein the adhesive layer has a curved surface; a dam structure disposed on the substrate and surrounded by the adhesive layer; and an encapsulant encapsulating the die.

2 . The package structure according to claim 1 , wherein the adhesive layer comprises a liquid-type die attach film (DAF) or a liquid-type film over wire (FOW).

3 . The package structure according to claim 1 , wherein the adhesive layer is free of filler.

4 . The package structure according to claim 1 , wherein the adhesive layer has a sinking portion, and a surface of the sinking portion is the curved surface.

5 . The package structure according to claim 4 , wherein a maximum thickness of the adhesive layer is smaller than or substantially equal to a thickness of the dam structure.

6 . The package structure according to claim 1 , wherein the adhesive layer has an overflow portion partially covers sidewalls of the die and a top surface of the dam structure, and a surface of the overflow portion is the curved surface.

7 . The package structure according to claim 6 , wherein a maximum thickness of the adhesive layer is greater than a thickness of the dam structure.

8 . A package structure, comprising:
a first die; a second die and a third die disposed side by side over the first die, wherein the third die has a through hole exposing the first die; an adhesive layer sandwiched between the third die and the first die, wherein the adhesive layer comprises a concave portion located in the through hole; a dam structure disposed on the first die and located in the through hole; and an encapsulant encapsulating the second die and the third die.

9 . The package structure according to claim 8 , further comprising:
a redistribution structure located on the first die opposite to the second die and the third die; and a plurality of conductive terminals over the redistribution structure.

10 . The package structure according to claim 8 , further comprising a plurality of connectors disposed between the second die and the first die, and the second die is electrically connected to the first die through the plurality of connectors.

11 . The package structure according to claim 8 , further comprising a dielectric material partially covering sidewalls of the through hole.

12 . The package structure according to claim 8 , wherein the third die is electrically floating.

13 . The package structure according to claim 8 , wherein the concave portion partially covers sidewalls of the through hole and a top surface of the dam structure.

14 . The package structure according to claim 8 , wherein the dam structure comprises metal.

15 . A manufacturing method of a package structure, comprising:
providing a first die having a first region and a second region adjacent to the first region; forming a dam structure in the second region; dispensing an adhesive layer in the second region, wherein the adhesive layer surrounds the dam structure; placing a second die in the first region and a third die in the second region, wherein the third die has an inner portion, an outer portion, and a trench located between the inner portion and the outer portion, and the trench is partially filled with a dielectric material; encapsulating the second die and the third die by an encapsulant; reducing a thickness of the third die to reveal the dielectric material filled in the trench of the third die; and removing the inner portion of the third die to expose the first die.

16 . The method according to claim 15 , wherein the step of placing the third die in the second region comprises:
aligning the dam structure and the trench of the third die; fitting the dam structure into the trench of the third die; and attaching the outer portion of the third die to the adhesive layer.

17 . The method according to claim 15 , wherein the step of removing the inner portion of the third die comprises:
performing a laser drilling process to remove a portion of the dielectric material such that the inner portion and the outer portion of the third die are disconnected from each other; and removing the inner portion of the third die to form a through hole exposing the first die.

18 . The method according to claim 15 , wherein the first die comprises a plurality of through silicon vias (TSV) in the first region, and the second region is free of TSV.

19 . The method according to claim 15 , further comprising forming a plurality of connectors in the first region, wherein the plurality of connectors in the first region and the dam structure in the second region are formed simultaneously.

20 . The method according to claim 15 , further comprising sequentially forming a redistribution structure and a plurality of conductive terminals on the first die opposite to the second die and the third die.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Cheng Li-Hui
• Kao Chin-Fu
• Chien Chih-Yuan
• Lu Szu-Wei

Classifications

• H01L24/16

  Electricity · mapped topic

• H01L2224/32052

  Electricity · mapped topic

• H01L2224/26145

  Electricity · mapped topic

• H01L2224/02379

  Electricity · mapped topic

• H01L2224/02331

  Electricity · mapped topic