Euv light source and apparatus for lithography

Patent metadata

Field	Value
Publication number	US-2020008290-A1
Application number	US-201916380423-A
Country	US
Kind code	A1
Filing date	Apr 10, 2019
Priority date	Jun 29, 2018
Publication date	Jan 2, 2020
Grant date	—

Abstract

An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

First claim

What is claimed is:

1 . An extreme ultra violet (EUV) radiation source apparatus, comprising:
a collector mirror; a target droplet generator for generating a tin (Sn) droplet; a rotatable debris collection device; one or more coils for generating an inductively coupled plasma (ICP); a gas inlet for providing a source gas for the ICP; and a chamber enclosing at least the collector mirror and the rotatable debris collection device, wherein the gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

2 . The EUV radiation source apparatus of claim 1 , wherein the source gas includes one or more of He, Ar, Xe, Cl 2 , H 2 , O 2 , SiH 4 , SiCl 4 and SiH 2 Cl 2 .

3 . The EUV radiation source apparatus of claim 1 , wherein the source gas is a Cl containing gas.

4 . The EUV radiation source apparatus of claim 1 , further comprising a lower cone provided between the rotatable debris collection device and an EUV output port,
wherein at least one coil surrounds or covers the lower cone.

5 . The EUV radiation source apparatus of claim 4 , wherein the gas inlet for providing the source gas is located at a position between the lower cone and the EUV output port.

6 . The EUV radiation source apparatus of claim 1 , wherein at least one coil surrounds or covers the rotatable debris collection device.

7 . The EUV radiation source apparatus of claim 6 , wherein the gas inlet for providing the source gas is located at a position between the rotatable debris collection device and the collector mirror.

8 . The EUV radiation source apparatus of claim 7 , further comprising a lower cone provided between the rotatable debris collection device and an EUV output port,
wherein a gas outlet port for exhausting the source gas is provided at at least one of a position between the rotatable debris collection device and the lower cone and a position between the lower cone and the EUV output port.

9 . The EUV radiation source apparatus of claim 1 , further comprising an AC power source for supplying AC power to the one or more coils.

10 . The EUV radiation source apparatus of claim 9 , wherein:
two or more coils are provided, and current for each of the two or more coils is independently tunable.

11 . The EUV radiation source apparatus of claim 10 , wherein a phase of the current flowing in one of the two or more coils is different by 180 degrees from a phase of the current flowing in another one of the two or more coils.

12 . An extreme ultra violet (EUV) radiation source apparatus, comprising:
a collector mirror; a target droplet generator for generating a tin (Sn) droplet; a rotatable debris collection device; one or more coils for generating an inductively coupled plasma (ICP); a gas inlet for providing a source gas including one or more of a Si containing gas and a Zr containing gas, for the ICP; and a chamber enclosing at least the collector mirror and the rotatable debris collection device.

13 . The EUV radiation source apparatus of claim 12 , wherein the source gas includes zirconium tetra-tert-butoxide.

14 . The EUV radiation source apparatus of claim 12 , wherein at least one coil surrounds or covers a backside of the collector mirror.

15 . The EUV radiation source apparatus of claim 12 , wherein at least one coil surrounds or covers the rotatable debris collection device.

16 . The EUV radiation source apparatus of claim 12 , further comprising a lower cone provided between the rotatable debris collection device and an EUV output port,
wherein at least one coil surrounds or covers the lower cone.

17 . A method of cleaning parts in a chamber of an EUV radiation source, the method comprising:
supplying a Cl containing gas into the chamber; and generating inductively coupled plasma (ICP) by supplying AC power to coils disposed inside the chamber, thereby removing tin debris by forming SnCl 4 , wherein the ICP is generated such that the ICP does not cause damage to a collector mirror.

18 . The method of claim 17 , wherein the ICP is generated during a period when an EUV light is not generated.

19 . The method of claim 17 , wherein current for each of the coils is independently controlled.

20 . The method of claim 19 , wherein a phase of the current flowing in one of the coils is different by 180 degrees from a phase of the current flowing in another one of the coils.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Su Yen-Shuo
• Chang Chun-Lin
• Chang Han-Lung
• Chen Li-Jui
• Cheng Po-Chung

Classifications

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/70916

  Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

• G03F7/70175

  Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source · CPC title

• G21K1/06

  using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) · CPC title