Stressed decoupled micro-electro-mechanical system sensor

Patent metadata

Field	Value
Publication number	US-2020002159-A1
Application number	US-201816024339-A
Country	US
Kind code	A1
Filing date	Jun 29, 2018
Priority date	Jun 29, 2018
Publication date	Jan 2, 2020
Grant date	—

Abstract

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device,
wherein the stress decoupling structure includes a set of trenches that are substantially perpendicular to a main surface of the semiconductor device, and
wherein the first region includes a micro-electro-mechanical (MEMS) structure; and
a sealing element to at least partially seal openings of the stress decoupling structure.

2 . The semiconductor device of claim 1 , wherein the stress decoupling structure further includes a cavity that at least partially separates the first region from the second region.

3 . The semiconductor device of claim 1 , wherein the sealing element includes a cap that at least partially seals the openings of the stress decoupling structure.

4 . The semiconductor device of claim 3 , wherein the cap includes a stress decoupling structure to decouple the first region and the second region.

5 . The semiconductor device of claim 3 , wherein the cap is formed from silicon or glass.

6 . The semiconductor device of claim 3 , wherein the cap is affixed to the first region and the second region using a wafer bonding process.

7 . The semiconductor device of claim 3 , wherein the cap is formed from an elastic material.

8 . The semiconductor device of claim 7 , wherein the elastic material at least partially fills the set of trenches of the stress decoupling structure.

9 . The semiconductor device of claim 1 , further comprising a molded package including an opening over the MEMS structure.

10 . The semiconductor device of claim 1 , further comprising a gel that covers the MEMS structure.

11 . The semiconductor device of claim 1 , wherein the sealing element includes a die attach material.

12 . The semiconductor device of claim 1 , wherein the sealing element includes a gel.

13 . The semiconductor device of claim 12 , wherein a portion of the second region overhangs the set of trenches such that the gel is prevented from entering the set of trenches by the portion of the second region,
wherein the portion of the second region is a portion of a back-end of line (BEOL) stack of the semiconductor device.

14 . The semiconductor device of claim 12 , wherein the sealing element further includes a gel protection cap that at least partially seals the set of trenches such that the gel is prevented from entering the set of trenches by the gel protection cap.

15 . A micro-electro-mechanical system (MEMS) sensor, comprising:
a first region comprising a MEMS structure; a second region; a stress decoupling structure that at least partially decouples the first region and the second region,
wherein the stress decoupling structure includes a set of trenches; and
a sealing element to prevent penetration of the set of trenches.

16 . The MEMS sensor of claim 15 , wherein the stress decoupling structure further includes a cavity that at least partially separates the first region from the second region.

17 . The MEMS sensor of claim 15 , wherein the sealing element includes a cap that at least partially seals openings of the stress decoupling structure.

18 . The MEMS sensor of claim 15 , further comprising a gel that covers the MEMS structure.

19 . The MEMS sensor of claim 15 , wherein the sealing element includes a gel.

20 . A method, comprising:
forming a stress decoupling structure that at least partially decouples a first region of a semiconductor device and a second region of the semiconductor device,
wherein the stress decoupling structure includes a set of trenches that are substantially perpendicular to a main surface of the semiconductor device; and
applying a sealing element that at least partially seals openings associated with the stress decoupling structure.

Assignees

• Infineon Tech Dresden Gmbh & Co Kg

Inventors

• Theuss Horst
• Knott Bernhard
• Kautzsch Thoralf
• Vogt Mirko
• Stegemann Maik
• Roeth Andre
• Haubold Marco
• Froehlich Heiko
• Langheinrich Wolfram
• Bieselt Steffen

Classifications

• B81B7/0025 Primary

  Protection against chemical alteration · CPC title

• B81B2203/033

  Trenches · CPC title

• B81B7/02 Primary

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title

• B81C1/00261

  Processes for packaging MEMS devices (MEMS packages B81B7/0032, packaging of smart-MEMS B81C1/0023) · CPC title

• B81B7/0032

  Packages or encapsulation (processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023) · CPC title