Method of forming resist pattern

Patent metadata

Field	Value
Publication number	US-2019391497-A1
Application number	US-201816490665-A
Country	US
Kind code	A1
Filing date	Feb 21, 2018
Priority date	Mar 29, 2017
Publication date	Dec 26, 2019
Grant date	—

Abstract

Disclosed is a method of forming a resist pattern which comprises: forming a radiation-sensitive resin film using a resin liquid containing an alkali-soluble resin, a cross-linker component, and an organic solvent; exposing the radiation-sensitive resin film to form a cured film; developing the cured film to form a developed pattern; and applying post-development baking on the developed pattern to provide a resist pattern, wherein the alkali-soluble resin comprises 35% by mass or more and 90% by mass or less of a polyvinyl phenol resin, and a temperature of the post-development baking is 200° C. or higher.

First claim

1 . A method of forming a resist pattern, comprising:
forming a radiation-sensitive resin film using a resin liquid containing an alkali-soluble resin, a cross-linker component, and an organic solvent; exposing the radiation-sensitive resin film to form a cured film; developing the cured film to form a developed pattern; and applying post-development baking on the developed pattern to provide a resist pattern, wherein the alkali-soluble resin comprises 35% by mass or more and 90% by mass or less of a polyvinyl phenol resin, and a temperature of the post-development baking is 200° C. or higher.

2 . The method of forming a resist pattern according to claim 1 , wherein the temperature of the post-development baking is 400° C. or lower.

3 . The method of forming a resist pattern according to claim 1 , wherein the temperature of the post-development baking is 220° C. or higher.

4 . The method of forming a resist pattern according to claim 1 , wherein the post-development baking is carried out in an inert gas atmosphere.

5 . The method of forming a resist pattern according to claim 4 , wherein the inert gas is nitrogen.

6 . The method of forming a resist pattern according to claim 1 , wherein the resin liquid further comprises an actinic radiation absorbing compound.

Assignees

• Zeon Corp

Inventors

• Sato Nobuhiro

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P14/683 Primary

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• G03F7/0382

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/20 Primary

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/012

  Macromolecular azides; Macromolecular additives, e.g. binders {(G03F7/0085 takes precedence)} · CPC title