Structures including metal carbide material, devices including the structures, and methods of forming same

Patent metadata

Field	Value
Publication number	US-2019390338-A1
Application number	US-201916563473-A
Country	US
Kind code	A1
Filing date	Sep 6, 2019
Priority date	Jun 26, 2015
Publication date	Dec 26, 2019
Grant date	—

Abstract

Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

First claim

We claim:

1 . A device formed by the steps of:
depositing a first metal carbide layer onto a substrate using a first precursor and a second precursor; depositing a second metal carbide layer onto the substrate using a third precursor and a fourth precursor, wherein at least one of the third precursor and the fourth precursor differs from both the first precursor and the second precursor, and wherein electrical properties of the device are manipulated by varying an amount of one or more of the first metal carbide layer and the second metal carbide layer.

2 . A method of forming a thin-film structure, the method comprising the steps of:
depositing a first metal carbide layer having a first composition overlying a substrate; and depositing a second metal carbide layer having a second composition overlying the first metal carbide layer, wherein the first composition is different from the second composition.

3 . The method of claim 2 , wherein the first metal carbide layer is formed using a first organometallic precursor and a first metal halide precursor.

4 . The method of claim 3 , wherein the second metal carbide layer is formed using a second organometallic precursor and the first metal halide precursor.

5 . The method of claim 3 , wherein the first organometallic precursor is selected from the group consisting of trimethylaluminum (TMA), triethylaluminum (TEA), dimethylaluminum hydride (DMAH), dimethylethylaminealane (DMEAA), and trimethylaminealane (TEAR), N-methylpyrroridinealane (MPA).

6 . The method of claim 4 , wherein the second organometallic precursor is selected from the group consisting of tritertbutylaluminum (TTBA).

7 . The method of claim 2 , further comprising the steps of forming one or more additional metal carbide layers.

8 . A method of forming a thin-film structure, the method comprising the steps of:
depositing a first metal carbide material onto a surface of a substrate using a first process; and depositing a second metal carbide material onto the first metal carbide material using a second process.

9 . A thin-film structure comprising:
a substrate; a first metal carbide material formed using a first process overlying the substrate; and a second metal carbide material formed using a second process overlying the first metal carbide material.

10 . The thin-film structure of claim 9 , wherein the first metal carbide and the second metal carbide comprise TiAlC.

11 . The thin-film structure of claim 9 , further comprising a layer of TiN.

Assignees

• Asm Ip Holding Bv

Inventors

• Raisanen Petri
• Givens Michael
• Shero Eric James

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• C23C16/45525 Primary

  Atomic layer deposition [ALD] · CPC title

• C23C16/32

  Carbides · CPC title

• H10D62/8162

  having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation · CPC title

• H10D64/691 Primary

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title