Phase shifter mask

Patent metadata

Field	Value
Publication number	US-2019332003-A1
Application number	US-201916504831-A
Country	US
Kind code	A1
Filing date	Jul 8, 2019
Priority date	Nov 29, 2016
Publication date	Oct 31, 2019
Grant date	—

Abstract

A phase shift mask (PSM) includes a light transmitting substrate. The PSM further includes a phase shifter over the light transmitting substrate, wherein the phase shifter includes a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.

First claim

What is claimed is:

1 . A phase shift mask (PSM), comprising:
a light transmitting substrate; and a phase shifter over the light transmitting substrate, wherein the phase shifter comprises a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.

2 . The PSM of claim 1 , further comprising:
a first opening through the phase shifter; and a second opening through the phase shifter.

3 . The PSM of claim 2 , wherein a depth of the first opening is equal to a depth of the second opening.

4 . The PSM of claim 2 , wherein a depth of the first opening is different from a depth of the second opening.

5 . The PSM of claim 2 , wherein a sidewall of the phase shifter in the first opening is tapered.

6 . The PSM of claim 1 , further comprising a shading layer over the light transmitting substrate.

7 . The PSM of claim 6 , wherein the shading layer is between the light transmitting substrate and the phase shifter.

8 . The PSM of claim 6 , wherein the phase shifter is between the light transmitting substrate and the shading layer.

9 . A phase shift mask (PSM), comprising:
a light transmitting substrate; a phase shifter over the light transmitting substrate, wherein the phase shifter comprising a first semiconductor layer, at least one pair of a first dielectric layer and a second semiconductor layer over the first semiconductor layer, and a second dielectric layer over the at least one pair of the first dielectric layer and the second semiconductor layer; and a shading layer over the phase shifter.

10 . The PSM of claim 9 , wherein the phase shifter and the shading layer define a plurality of openings.

11 . The PSM of claim 10 , wherein each opening of the plurality of openings has a same depth.

12 . The PSM of claim 10 , wherein at least one opening of the plurality of openings has a different depth from another opening of the plurality of openings.

13 . The PSM of claim 10 , wherein a sidewall of the phase shifter defining a first opening of the plurality of openings is tapered.

14 . The PSM of claim 10 , wherein a sidewall of the phase shifter defining a first opening of the plurality of openings comprises a curved portion.

15 . The PSM of claim 9 , wherein the PSM is a tri-tone PSM.

16 . A phase shift mask (PSM), comprising:
a light transmitting substrate; a plurality of phase shifter stacks over the light transmitting substrate, wherein each of the plurality of phase shifter stacks comprises a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion; and a plurality of openings, wherein adjacent phase shifter stacks of the plurality of phase shifter stacks define a corresponding opening of the plurality of openings.

17 . The PSM of claim 16 , wherein a top surface of the light transmitting substrate exposed by a first opening of the plurality of openings is co-planar with a top surface of the light transmitting substrate exposed by a second opening of the plurality of openings.

18 . The PSM of claim 16 , wherein a top surface of the light transmitting substrate exposed by a first opening of the plurality of openings is offset in a direction perpendicular to the top surface with respect to a top surface of the light transmitting substrate exposed by a second opening of the plurality of openings.

19 . The PSM of claim 16 , further comprising a plurality of shading layers, wherein each shading layer of the plurality of shading layers is between the light transmitting substrate and a corresponding phase shifter stack of the plurality of phase shifter stacks.

20 . The PSM of claim 16 , further comprising a plurality of shading layers, wherein each shading layer of the plurality of shading layers is separated from the light transmitting substrate by a corresponding phase shifter stack of the plurality of phase shifter stacks.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Chun-Lang
• Tu Chih-Chiang
• Yang Shih-Hao

Classifications

• G03F1/26 Primary

  Phase shift masks [PSM]; PSM blanks; Preparation thereof · CPC title

• G03F1/28

  with three or more diverse phases on the same PSM; Preparation thereof · CPC title

• G03F1/30

  Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof · CPC title

• G03F1/00 Primary

  Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof · CPC title

• H01L21/0332

  Electricity · mapped topic