Cmp compositions containing polymer complexes and agents for sti applications

Patent metadata

Field	Value
Publication number	US-2019284434-A1
Application number	US-201815920813-A
Country	US
Kind code	A1
Filing date	Mar 14, 2018
Priority date	Mar 14, 2018
Publication date	Sep 19, 2019
Grant date	—

Abstract

The invention relates to a chemical-mechanical polishing composition comprising (a) ceria abrasive particles, (b) a cationic polymer, (c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof, (d) a saturated monoacid, and (e) an aqueous carrier. The invention also relates to a method of polishing a substrate.

First claim

1 . A chemical-mechanical polishing composition comprising:
(a) ceria abrasive particles, (b) a cationic polymer, (c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof, (d) a saturated monoacid, and (e) an aqueous carrier.

2 . The polishing composition of claim 1 , wherein the ceria abrasive particles comprise calcined ceria particles, wet ceria particles, wet-based processed ceria particles, or a combination thereof.

3 . The polishing composition of claim 1 , wherein the ceria abrasive particles are present in the polishing composition at a concentration of about 0.0005 wt. % to about 10 wt. %.

4 . The polishing composition of claim 1 , wherein the cationic polymer comprises poly(diallyldimethylammonium chloride)-co-poly(acrylamide), poly(2-dimethylamino)ethyl methacrylate) methyl chloride quaternary salt, poly(diallyldimethylammonium chloride), polyvinylmethyl imidazolium methyl sulfate, poly(dimethylamine-co-epichlorohydrin), poly(vinylmethyl imidazolium methyl sulfate)-co-poly(vinylpyrrolidone), poly(vinylmethyl imidazolium chloride)-co-poly(N-vinylpyrrolidone), poly(vinylpyrrolidone)-co-poly(methacrylamide)-co-poly(vinylimidazole)-co-poly(vinylmethyl imidazolium methyl sulfate), poly(vinylpyrrolidone)-co-poly(dimethylaminoethyl methacrylate methyl sulfate), poly(vinylcaprolactam)-co-poly(vinylpyrrolidone)-co-poly(vinylmethyl imidazolium methyl sulfate), or a combination thereof.

5 . The polishing composition of claim 1 , wherein the cationic polymer is present in the polishing composition at a concentration of about 0.0005 wt. % to about 0.025 wt. %.

6 . The polishing composition of claim 1 , wherein the nonionic polymer is present in the polishing composition at a concentration of about 0.0005 wt. % to about 0.5 wt. %.

7 . The polishing composition of claim 1 , wherein the saturated monoacid comprises formic acid, acetic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, or a combination thereof.

8 . The polishing composition of claim 1 , wherein the saturated monoacid is present in the polishing composition at a concentration of about 0.0001 wt. % to about 0.5 wt. %.

9 . The polishing composition of claim 1 , further comprising an additive selected from biocides, scale inhibitors, dispersants, pH adjustors, and a combination thereof.

10 . The polishing composition of claim 1 , wherein the pH of the polishing composition is about 3.0 to about 5.0.

11 . The polishing composition of claim 1 , further comprising an unsaturated monoacid.

12 . The polishing composition of claim 11 , wherein the unsaturated monoacid comprises a C 3 -C 6 unsaturated monoacid.

13 . The polishing composition of claim 12 , wherein the C 3 -C 6 unsaturated mono acid comprises acrylic acid, 2-butenoic acid, 2-pentenoic acid, trans-2-hexenoic acid, trans-3-hexenoic acid, 2-hexynoic acid, 2,4-hexadienoic acid, potassium sorbate, trans-2- methyl-2-butenoic acid, 3,3-dimethylacrylic acid, or a combination thereof, including stereoisomers thereof.

14 . The polishing composition of claim 13 , wherein the C 3 -C 6 unsaturated monoacid comprises 2-butenoic acid.

15 . The polishing composition of claim 11 , wherein the unsaturated monoacid is present in the polishing composition at a concentration of about 0.0001 wt. % to about 0.5 wt. %.

16 . A method of chemically-mechanically polishing a substrate comprising:
providing a substrate comprising a dielectric layer on a surface of the substrate; (ii) providing a polishing pad; (iii) providing a chemical-mechanical polishing composition comprising:
(a) ceria abrasive particles,
(b) a cationic polymer,
(c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof,
(d) a saturated monoacid, and
(e) an aqueous carrier;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the dielectric layer on a surface of the substrate to polish the substrate.

17 . The method of claim 16 , wherein the ceria abrasive particles comprise calcined ceria particles, wet ceria particles, wet-based processed ceria particles, or a combination thereof.

18 . The method of claim 16 , wherein the ceria abrasive particles are present in the polishing composition at a concentration of about 0.0005 wt. % to about 10 wt. %.

19 . The method of claim 16 , wherein the cationic polymer comprises poly(diallyldimethylammonium chloride)-co-poly(acrylamide), poly(-dimethylamino)ethyl methacrylate) methyl chloride quaternary salt, poly(diallyldimethylammonium chloride), polyvinylmethyl imidazolium methyl sulfate, poly(dimethylamine-co-epichlorohydrin), poly(vinylmethyl imidazolium methyl sulfate)-co-poly(vinylpyrrolidone), poly(vinylmethyl imidazolium chloride)-co-poly(N-vinylpyrrolidone), poly(vinylpyrrolidone)-co-poly(methacrylamide)-co-poly(vinylimidazole)-co-poly(vinylmethyl imidazolium methyl sulfate), poly(vinylpyrrolidone)-co-poly(dimethylaminoethyl methacrylate methyl sulfate), poly(vinylcaprolactam)-co-poly(vinylpyrrolidone)-co-poly(vinylmethyl imidazolium methyl sulfate), or a combination thereof.

20 . The method of claim 16 , wherein the cationic polymer is present in the polishing composition at a concentration of about 0.0005 wt. % to about 0.025 wt. %.

21 . The method of claim 16 , wherein the nonionic polymer is present in the polishing composition at a concentration of about 0.0005 wt. % to about 0.5 wt. %.

22 . The method of claim 16 , wherein the saturated monoacid comprises formic acid, acetic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, or a combination thereof.

23 . The method of claim 16 , wherein the saturated monoacid is present in the polishing composition at a concentration of about 0.0001 wt. % to about 0.5 wt. %.

24 . The method of claim 16 , wherein the pH of the polishing composition is about 3.0 to about 5.0.

25 . The method of claim 16 , wherein the polishing composition further comprises an unsaturated monoacid.

26 . The method of claim 25 , wherein the unsaturated monoacid comprises a C 3 -C 6 unsaturated monoacid.

27 . The method of claim 26 , wherein the C 3 -C 6 unsaturated mono acid comprises acrylic acid, 2-butenoic acid, 2-pentenoic acid, trans-2-hexenoic acid, trans-3-hexenoic acid, 2-hexynoic acid, 2,4-hexadienoic acid, potassium sorbate, trans-2-methyl-2-butenoic acid, 3,3-dimethylacrylic acid, or a combination thereof, including stereoisomers thereof.

28 . The method of claim 25 , wherein the unsaturated monoacid is present in the polishing composition at a concentration of about 0.0001 wt. % to about 0.5 wt. %.

29 . The method of claim 16 , wherein the dielectric layer comprises silicon oxide.

30 . The method of claim 16 , wherein the substrate further comprises a silicon nitride (SiN) layer on a surface of the substrate.

Assignees

• Cabot Microelectronics Corp

Inventors

• Brosnan Sarah

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title