Aqueous solution for resist pattern coating and pattern forming method using the same

Patent metadata

Field	Value
Publication number	US-2019243251-A1
Application number	US-201716343342-A
Country	US
Kind code	A1
Filing date	Oct 13, 2017
Priority date	Oct 19, 2016
Publication date	Aug 8, 2019
Grant date	—

Abstract

A novel aqueous solution for resist pattern coating including, as an A component, a cyclodextrin selected from the group consisting of α-cyclodextrin, β-cyclodextrin, and γ-cyclodextrin, or a derivative of the cyclodextrin, as a B component, a solvent containing water as a main component, and as a component C, an organic sulfonic acid of Formula (2):

(wherein R 4 is alkyl or fluorinated alkyl group, or an aromatic group having at least one substituent, and M + is a hydrogen ion, an ammonium ion, a pyridinium ion, or an imidiazolium ion), or a salt thereof, wherein the content of the A component is 0.1% by mass to 10% by mass relative to 100% by mass of the total aqueous solution, and wherein the content of the organic sulfonic acid or the salt thereof is 0.01% by mass to 50% by mass relative to 100% by mass of the component A.

First claim

1 . An aqueous solution for resist pattern coating comprising, as an A component, a cyclodextrin selected from the group consisting of α-cyclodextrin, β-cyclodextrin, and γ-cyclodextrin, or a derivative of the cyclodextrin, and as a B component, a solvent containing water as a main component, wherein the content of the A component is 0.1% by mass to 10% by mass relative to 100% by mass of the aqueous solution.

2 . The aqueous solution for resist pattern coating according to claim 1 , wherein the derivative of the cyclodextrin is a compound having at least one unit of Formula (1a), (1b), (1c), or (1d) described below:

wherein A 1 is an amino group, an azi group, a mercapto group, a methoxy group, an acetoxy group, or a tosyloxy group, A 2 is an amino group, an azi group, a hydroxy group, or a triphenylmethyl group, R 2 and R 3 are each independently a hydrogen atom, a methyl group, an ethyl group, a propyl group, or an acetyl group, R 0 is a C 1-4 alkylene or alkenylene group, R 1 is a C 2-4 alkylene group, and n is an integer of 2 to 8.

3 . The aqueous solution for resist pattern coating according to claim 1 , wherein the solvent as the component B further contains at least one water-soluble organic solvent selected from the group consisting of alcohols, esters, ethers, and ketones.

4 . The aqueous solution for resist pattern coating according to claim 1 , further comprising, as a component C, an organic sulfonic acid of Formula (2):

wherein R 4 is a linear, branched, or cyclic alkyl or fluorinated alkyl group having a carbon atom number of 1 to 16, or an aromatic group having at least one of the alkyl group, the fluorinated alkyl group, a hydroxy group, or a carboxy group as a substituent, the cyclic alkyl group may have a carbonyl group in a main chain, and M + is a hydrogen ion, an ammonium ion, a pyridinium ion, or an imidiazolium ion or a salt thereof, wherein the content of the organic sulfonic acid or the salt thereof is 0.01% by mass to 50% by mass relative to 100% by mass of the component A.

5 . The aqueous solution for resist pattern coating according to claim 4 , wherein the component C is an organic sulfonate of Formula (2) described below.

6 . A method for forming a pattern comprising steps of:
exposing a resist film formed on a substrate through a resist underlayer film, baking the resist film, developing the resist film by a developer, and rinsing the resist film by a rinsing liquid through a lithography process to form a linear or columnar resist pattern; after the rinsing, applying the aqueous solution for resist pattern coating according to claim 1 so as to cover the resist pattern without drying the resist pattern; and spin-drying the substrate coated with the aqueous solution for resist pattern coating and forming a coating film on a surface of the resist pattern with or without heating at 50° C. to 130° C.

7 . A method for forming a pattern comprising steps of:
exposing a resist film formed on a substrate through a resist underlayer film, baking the resist film, developing the resist film by a developer, and rinsing the resist film by a rinsing liquid through a lithography process to form a resist pattern; after the rinsing, applying the aqueous solution for resist pattern coating according to claim 4 so as to cover the resist pattern without drying the resist pattern; spin-drying the substrate coated with the aqueous solution for resist pattern coating and forming a coating film on a surface of the resist pattern with or without heating at 50° C. to 130° C.; and cooling the substrate having the formed coating film and etching the coating film by an etching gas to remove the coating film.

8 . A method for forming a pattern comprising steps of:
exposing a resist film formed on a substrate through a resist underlayer film, baking the resist film, developing the resist film by a developer, and rinsing the resist film by a rinsing liquid through a lithography process to form a resist pattern; after the rinsing, applying the aqueous solution for resist pattern coating according to claim 4 so as to cover the resist pattern without drying the resist pattern; spin-drying the substrate coated with the aqueous solution for resist pattern coating and forming a coating film on a surface of the resist pattern with or without heating at 50° C. to 130° C.; cooling the substrate having the coating film and developing the coating film by a developer; and after the developing the coating film, rinsing the resist pattern by a rinsing liquid.

9 . A method for forming an inverted pattern comprising steps of:
exposing a resist film formed on a substrate through a resist underlayer film, baking the resist film, developing the resist film by a developer, and rinsing the resist film by a rinsing liquid through a lithography process to form a resist pattern; after the rinsing, applying the aqueous solution for resist pattern coating according to claim 1 so as to cover the resist pattern without drying the resist pattern; spin-drying the substrate coated with the aqueous solution for resist pattern coating and forming a coating film on a surface of the resist pattern with or without heating at 50° C. to 130° C.; cooling the substrate having the coating film and developing the coating film by a developer; after the developing the coating film, applying a coating liquid for filling containing a polysiloxane and a solvent containing water and/or an alcohol so as to fill a space in the resist pattern; removing or decreasing a component contained in the coating liquid for filling except for the polysiloxane and the developer used during developing the coating film to form a coating film; etch-backing the coating film to expose an upper surface of the resist pattern; and removing the resist pattern having the exposed upper surface.

10 . A method for forming an inverted pattern comprising steps of:
exposing a resist film formed on a substrate through a resist underlayer film, baking the resist film, and developing the resist film by a developer through a lithography process to form a resist pattern; applying the aqueous solution for resist pattern coating according to claim 1 so as to cover the resist pattern; spin-drying the substrate coated with the aqueous solution for resist pattern coating and forming a coating film on a surface of the resist pattern with or without heating at 50° C. to 130° C.; cooling the substrate having the coating film and developing the coating film by a developer; after the developing the coating film, rinsing the resist pattern by a rinsing liquid; after the rinsing, applying a coating liquid for filling containing a polysiloxane and a solvent containing water and/or an alcohol so as to fill a space in the resist pattern without drying the resist pattern; removing or decreasing a component contained in the coating liquid for filling except for the polysiloxane and the rinsing liquid to form a coating film; etch-backing the coating film to expose an upper surface of the resist pattern; and removing the resist pattern having the exposed upper surface.

Assignees

• Nissan Chemical Corp

Inventors

• Nishita Tokio
• Sakamoto Rikimaru

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• C09D7/63

  organic · CPC title

• C09D105/16 Primary

  Cyclodextrin; Derivatives thereof · CPC title

• G03F7/40 Primary

  Treatment after imagewise removal, e.g. baking · CPC title

• C08K5/42

  Sulfonic acids; Derivatives thereof · CPC title