Etching Method and Etching Apparatus

Patent metadata

Field	Value
Publication number	US-2019221440-A1
Application number	US-201916244511-A
Country	US
Kind code	A1
Filing date	Jan 10, 2019
Priority date	Jan 17, 2018
Publication date	Jul 18, 2019
Grant date	—

Abstract

An etching method includes etching a silicon-containing film formed on a surface of a substrate by supplying an iodine heptafluoride gas and a basic gas to the substrate.

First claim

What is claimed is:

1 . An etching method, comprising:
etching a silicon-containing film formed on a surface of a substrate by supplying an iodine heptafluoride gas and a basic gas to the substrate.

2 . The method of claim 1 , wherein a time period during which the iodine heptafluoride gas is supplied to the substrate and a time period during which the basic gas is supplied to the substrate overlap with each other.

3 . The method of claim 2 , further comprising, in a state where a temperature of the substrate is set to be 80 degrees C. or higher, supplying the basic gas and the iodine heptafluoride gas to a process container that stores the substrate so that a ratio of a flow rate of the basic gas/a flow rate of the iodine heptafluoride gas becomes 1 to 1.8.

4 . The method of claim 2 , further comprising, in a state where a temperature of the substrate is set to be lower than 80 degrees C., supplying the basic gas and the iodine heptafluoride gas to a process container that stores the substrate so that a ratio of a flow rate of the basic gas/a flow rate of the iodine heptafluoride gas becomes 1 or less.

5 . The method of claim 1 , wherein the basic gas and the iodine heptafluoride gas are supplied to the substrate in this order.

6 . The method of claim 1 , wherein the etching the silicon-containing film includes supplying the iodine heptafluoride gas and the basic gas to the substrate in a state where a temperature of the substrate is set to be 30 to 120 degrees C.

7 . The method of claim 1 , wherein the etching the silicon-containing film includes supplying the iodine heptafluoride gas and the basic gas in a state where an internal pressure of a process container that stores the substrate is set to be 13.3 Pa to 133.3 Pa.

8 . The method of claim 1 , wherein the basic gas is an ammonia gas.

9 . An etching apparatus, comprising:
a process container; a mounting part installed in the process container and configured to mount a substrate having a silicon-containing film formed on a surface of the substrate; and a gas supply part configured to supply an iodine heptafluoride gas and a basic gas to the process container so as to etch the silicon-containing film.

Assignees

• Tokyo Electron Ltd

Inventors

• Asada Yasuo
• Orii Takehiko
• Suzuki Kento

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/266 Primary

  by vapour etching only · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title