Method of forming tin-containing material film and method of synthesizing a tin compound

Patent metadata

Field	Value
Publication number	US-2019144472-A1
Application number	US-201916249067-A
Country	US
Kind code	A1
Filing date	Jan 16, 2019
Priority date	Dec 2, 2016
Publication date	May 16, 2019
Grant date	—

Abstract

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I):

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

First claim

1 .- 10 . (canceled)

11 . A method of forming a tin-containing material film, the method comprising:
forming a monolayer of a tin precursor compound on a substrate in a reaction space, the tin precursor compound having a structure represented by Chemical Formula (I); forming a tin-containing material film by supplying a reactant onto the monolayer; and removing unreacted reactant from the vicinity of a surface of the tin-containing material film by purging the unreacted reactant,

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

12 . The method as claimed in claim 11 , wherein:
the reactant includes O 2 , O 3 , plasma O 2 , H 2 O, NO 2 , NO, N 2 O, CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, or mixtures thereof, and the tin-containing material film is a tin oxide film.

13 . The method as claimed in claim 12 , wherein the tin oxide film includes a rutile crystal phase.

14 . The method as claimed in claim 11 , wherein:
the reactant includes NH 3 , a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and the tin material film is a tin nitride film.

15 . The method as claimed in claim 11 , wherein the tin precursor compound has a substantially constant atomic layer deposition rate in a temperature range of about 270° C. to about 350° C.

16 . The method as claimed in claim 11 , wherein the tin precursor compound has a substantially constant atomic layer deposition rate in a temperature range of about 270° C. to about 320° C.

17 . The method as claimed in claim 11 , wherein the tin-containing material film does not include halogen elements.

18 . The method as claimed in claim 11 , wherein forming the monolayer of the tin precursor compound having the structure represented by Chemical Formula (I) on the substrate in the reaction space includes supplying the tin precursor compound having the structure represented by Chemical Formula (I) onto the substrate for about 1 second to about 100 seconds.

19 . The method as claimed in claim 11 , wherein the tin-containing material film is a conductive barrier film, a tunnel barrier film of a gate dielectric film, a barrier metal film for liquid crystals, a member for thin film solar cells, a member for semiconductor equipment, or a nano-structure.

20 . A method of synthesizing a tin compound, the method comprising:
obtaining SnX 2 R 2 by reacting SnX 4 with SnR 4 according to Reaction Formula (I); and obtaining Sn(NQ 2 ) 2 R 2 by reacting SnX 2 R 2 with LiNQ 2 according to Reaction Formula (II),
SnX 4 +SnR 4 →SnX 2 R 2   <Reaction Formula (I)>

SnX 2 R 2 +2LiNQ 2 →Sn(NQ 2 ) 2 R 2 +2LiX  <Reaction Formula (II)>

wherein: X includes fluorine, chlorine, bromine, or iodine, and R and Q are each independently a C1 to C4 linear or branched alkyl group.

21 . The method as claimed in claim 20 , wherein X is chlorine, R is a methyl group, and Q is a methyl group, an ethyl group, or isopropyl group.

22 . The method as claimed in claim 20 , wherein:
the reaction of Reaction Formula (I) is performed at a temperature of about 0° C. to about 15° C., and the reaction of Reaction Formula (II) is performed at a temperature of about 10° C. to about 50° C.

23 . A method of forming a tin-containing material film, the method comprising:
providing a substrate in a reactor; supplying a tin precursor to the substrate to form a monolayer of the tin precursor, the tin precursor being represented by Chemical Formula (I); supplying a reactant onto the monolayer to form the tin-containing material film; and purging the reactor,

wherein, in Chemical Formula (I), R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

24 . The method as claimed in claim 23 , wherein:
the reactant includes O 2 , O 3 , plasma O 2 , H 2 O, NO 2 , NO, N 2 O, CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, or mixtures thereof, and the tin-containing material film is a tin oxide film.

25 . The method as claimed in claim 23 , wherein:
the reactant includes NH 3 , a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and the tin material film is a tin nitride film.

26 . The method as claimed in claim 23 , wherein the tin-containing material film does not include halogen elements.

27 . The method as claimed in claim 23 , wherein the tin precursor is supplied to the substrate for about 1 second to about 100 seconds.

28 . The method as claimed in claim 23 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

29 . The method as claimed in claim 28 , wherein R 1 and R 2 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

30 . A semiconductor device including the tin-containing material film prepared by the method as claimed in claim 23 .

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Ryu Seung-Min
• Kim Youn-Soo
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Jeon Sang-Yong

Classifications

• C23C16/407

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F7/2284 Primary

  Compounds with one or more Sn-N linkages · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title