Method of Conformal Etching Selective To Other Materials

Patent metadata

Field	Value
Publication number	US-2019139779-A1
Application number	US-201816178144-A
Country	US
Kind code	A1
Filing date	Nov 1, 2018
Priority date	Nov 7, 2017
Publication date	May 9, 2019
Grant date	—

Abstract

Plasma processing methods that provide for conformal etching of silicon nitride while also providing selectivity to another layer are described. In one embodiment, an etch is provided that utilizes gases which include fluorine, nitrogen, and oxygen, for example a gas mixture of SF 6 , N 2 and O 2 gases. Specifically, a plasma etch utilizing SF 6 , N 2 and O 2 gases at high pressure with no bias is provided. The process accelerates silicon nitride etching by chemical reactions of [NO] x molecules from the plasma and [N] atoms from silicon nitride film. The etch provides a conformal (isotropic) etch that is selective to other materials such as silicon and silicon oxides (for example, but not limited to, silicon dioxide).

First claim

What is claimed is:

1 . A method of conformal selective silicon nitride etching, the method comprising:
providing a workpiece comprising a first portion containing silicon nitride and a second portion containing silicon and/or silicon oxide; performing a conformal selective etching process with a non-polymerizing microwave plasma generated using a gas mixture of fluorine-containing gas, nitrogen-containing gas, and oxygen-containing gas at an elevated pressure and zero bias power, the gas mixture at a target ratio of each gas to the gas mixture; and controlling operating variables in order to maintain a target etch selectivity of the first portion of the workpiece compared to the second portion of the workpiece.

2 . The method of claim 1 , wherein the gas mixture comprises SF 6 , N 2 and O 2 gases.

3 . The method of claim 2 , wherein SF 6 , N 2 and O 2 gases are provided in relative gas ratios of O 2 >N 2 >SF 6 .

4 . The method of claim 1 , wherein the conformal selective etching process is used to trim a silicon nitride spacer.

5 . The method of claim 4 , wherein the gas mixture comprises SF 6 , N 2 and O 2 gases.

6 . The method of claim 5 , wherein SF 6 , N 2 and O 2 gases are provided in relative gas ratios of O 2 >N 2 >SF 6 .

7 . The method of claim 1 , wherein the conformal selective etching process is used to reveal a Fin.

8 . The method of claim 7 , wherein the Fin is part of a FinFET.

9 . The method of claim 7 , wherein the gas mixture comprises SF 6 , N 2 and O 2 gases.

10 . The method of claim 9 , wherein SF 6 , N 2 and O 2 gases are provided in relative gas ratios of O 2 >N 2 >SF 6 .

11 . The method of claim 1 , wherein the conformal selective etching process is used to reveal a nanosheet.

12 . The method of claim 11 wherein the gas mixture comprises SF 6 , N 2 and O 2 gases.

13 . The method of claim 12 , wherein SF 6 , N 2 and O 2 gases are provided in relative gas ratios of O 2 >N 2 >SF 6 .

14 . A method of processing a substrate, the method comprising:
providing a silicon nitride layer; providing a second layer, wherein the second layer is comprised of material different than the silicon nitride layer; subjecting the silicon nitride layer and the second layer to a microwave plasma etch process which includes the use of fluorine-containing gas, nitrogen-containing gas, and oxygen-containing gas; and controlling a pressure and a microwave power of the plasma etch process to provide for a conformal etch of the silicon nitride layer that is selective to the second layer, wherein the pressure of the plasma etch process is greater than or equal to 250 milliTorr.

15 . The method of claim 14 , wherein a gas mixture of the plasma etch process comprises SF 6 , N 2 and O 2 gases and wherein SF 6 , N 2 and O 2 gases are provided in relative gas ratios of O 2 >N 2 >SF 6 .

16 . The method of claim 14 , wherein the second layer is comprised of silicon or silicon oxide.

17 . The method of claim 16 , wherein the conformal etch of the silicon nitride layer is used to trim a silicon nitride spacer.

18 . The method of claim 17 , wherein a gas mixture of the plasma etch process comprises SF 6 , N 2 and O 2 gases and wherein SF 6 , N 2 and O 2 gases are provided in relative gas ratios of O 2 >N 2 >SF 6 .

19 . The method of claim 16 , wherein the conformal etch of the silicon nitride layer is used to reveal a fin or to reveal a nanosheet.

20 . The method of claim 19 , wherein a gas mixture of the plasma etch process comprises SF 6 , N 2 and O 2 gases and wherein SF6, N2 and O2 gases are provided in relative gas ratios of O2>N2>SF6.

Assignees

• Tokyo Electron Ltd

Inventors

• Karakas Erdinc
• Sherpa Sonam D
• Ranjan Alok

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H01L29/66795

  Electricity · mapped topic

• H01L29/6653

  Electricity · mapped topic

• H01L21/31116 Primary

  Electricity · mapped topic

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title