Method for manufacturing insulated circuit board, insulated circuit board, and thermoelectric conversion module

Patent metadata

Field	Value
Publication number	US-2019132956-A1
Application number	US-201716306708-A
Country	US
Kind code	A1
Filing date	Jun 23, 2017
Priority date	Jun 23, 2016
Publication date	May 2, 2019
Grant date	—

Abstract

The method for manufacturing an insulated circuit board of the present invention includes: a ceramic/aluminum-joining step of joining an aluminum material to a ceramic substrate and thereby, forming an aluminum layer; a titanium material-disposing step of disposing a titanium material on a surface of the aluminum layer or the aluminum material in a circuit pattern shape; a titanium layer-forming step of performing a heat treatment in a state where the titanium material is laminated on the surface of the aluminum layer or the aluminum material and thereby, forming the titanium layer; and an etching treatment step of etching the aluminum layer on which the titanium layer is formed, into the circuit pattern shape.

First claim

1 . A method for manufacturing an insulated circuit board including a ceramic substrate and a circuit layer having a circuit pattern disposed on one surface of the ceramic substrate,
wherein the circuit layer includes an aluminum layer disposed on the one surface of the ceramic substrate, and a titanium layer formed on a surface of the aluminum layer on a side opposite to the ceramic substrate, and the method comprises: a ceramic/aluminum-joining step of joining an aluminum material to the ceramic substrate and thereby, forming the aluminum layer; a titanium material-disposing step of disposing a titanium material, which is to become the titanium layer, on a surface of the aluminum layer or the aluminum material in the circuit pattern shape; a titanium layer-forming step of performing a heat treatment in a state where the titanium material is laminated on the surface of the aluminum layer or the aluminum material and thereby, forming the titanium layer; and an etching treatment step of etching the aluminum layer on which the titanium layer is formed, into the circuit pattern shape.

2 . The method for manufacturing an insulated circuit board according to claim 1 ,
wherein the circuit layer includes a metal member layer consisting of copper, a copper alloy, nickel, a nickel alloy, silver, or a silver alloy laminated on a surface of the titanium layer on a side opposite to the aluminum layer, and the method further comprises a metal member layer-forming step of forming the metal member layer on the surface of the titanium layer formed into the circuit pattern shape after the etching treatment step.

3 . The method for manufacturing an insulated circuit board according to claim 2 , further comprising:
a titanium layer-cleaning step of cleaning the surface of the titanium layer before the metal member layer-forming step.

4 . The method for manufacturing an insulated circuit board according to claim 1 ,
wherein the titanium material-disposing step and the titanium layer-forming step are performed after the ceramic/aluminum-joining step.

5 . The method for manufacturing an insulated circuit board according to claim 1 ,
wherein the ceramic/aluminum-joining step is performed after the titanium layer-forming step.

6 . The method for manufacturing an insulated circuit board according to claim 1 ,
wherein the titanium layer-forming step and the ceramic/aluminum-joining step are simultaneously performed.

7 . The method for manufacturing an insulated circuit board according to claim 1 , further comprising:
an aluminum-cleaning step of cleaning the surface of the aluminum layer or the aluminum material before the titanium material-disposing step.

8 . The method for manufacturing an insulated circuit board according to claim 1 , further comprising:
a Si-enriched layer-forming step of forming a Si-enriched layer containing Si in an amount of 0.03 mass % or more and 1.0 mass % or less on the surface of the aluminum layer or the aluminum material on which the titanium layer is to be formed, before the titanium material-disposing step.

9 . An insulated circuit board, comprising:
a ceramic substrate; and a circuit layer having a circuit pattern disposed on one surface of the ceramic substrate, wherein the circuit layer includes an aluminum layer disposed on the one surface of the ceramic substrate, and a titanium layer formed on a surface of the aluminum layer on a side opposite to the ceramic substrate.

10 . A thermoelectric conversion module, comprising:
a thermoelectric element mounted on the circuit layer of the insulated circuit board according to claim 9 .

11 . The method for manufacturing an insulated circuit board according to claim 2 ,
wherein the titanium material-disposing step and the titanium layer-forming step are performed after the ceramic/aluminum-joining step.

12 . The method for manufacturing an insulated circuit board according to claim 3 wherein the titanium material-disposing step and the titanium layer-forming step are performed after the ceramic/aluminum-joining step.

13 . The method for manufacturing an insulated circuit board according to claim 2 ,
wherein the ceramic/aluminum-joining step is performed after the titanium layer-forming step.

14 . The method for manufacturing an insulated circuit board according to claim 3 ,
wherein the ceramic/aluminum-joining step is performed after the titanium layer-forming step.

15 . The method for manufacturing an insulated circuit board according to claim 2 ,
wherein the titanium layer-forming step and the ceramic/aluminum-joining step are simultaneously performed.

16 . The method for manufacturing an insulated circuit board according to claim 3 ,
wherein the titanium layer-forming step and the ceramic/aluminum-joining step are simultaneously performed.

17 . The method for manufacturing an insulated circuit board according to claim 2 , further comprising:
an aluminum-cleaning step of cleaning the surface of the aluminum layer or the aluminum material before the titanium material-disposing step.

18 . The method for manufacturing an insulated circuit board according to claim 3 , further comprising:
an aluminum-cleaning step of cleaning the surface of the aluminum layer or the aluminum material before the titanium material-disposing step.

19 . The method for manufacturing an insulated circuit board according to claim 2 , further comprising:
a Si-enriched layer-forming step of forming a Si-enriched layer containing Si in an amount of 0.03 mass % or more and 1.0 mass % or less on the surface of the aluminum layer or the aluminum material on which the titanium layer is to be formed, before the titanium material-disposing step.

20 . The method for manufacturing an insulated circuit board according to claim 3 , further comprising:
a Si-enriched layer-forming step of forming a Si-enriched layer containing Si in an amount of 0.03 mass % or more and 1.0 mass % or less on the surface of the aluminum layer or the aluminum material on which the titanium layer is to be formed, before the titanium material-disposing step.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Ohashi Toyo

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title