Mask pattern forming method, fine pattern forming method, and film deposition apparatus

Patent metadata

Field	Value
Publication number	US-2019115204-A1
Application number	US-201816216255-A
Country	US
Kind code	A1
Filing date	Dec 11, 2018
Priority date	Sep 29, 2008
Publication date	Apr 18, 2019
Grant date	—

Abstract

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

First claim

What is claimed is:

1 . A substrate processing apparatus comprising:
a process chamber configured to process a substrate including a pattern on a thin film, the pattern having lines and spaces therein; a source gas supplying device configured to supply a source gas to the process chamber; an oxygen-containing gas supplying device configured to supply an oxygen-containing gas to the process chamber; a plasma generating device configured to generate a plasma in the process chamber; and a controller configured to cause: (a) slimming the pattern by generating a first oxygen-containing gas plasma in the process chamber; (b) forming an oxide film on the slimmed pattern and the thin film in the process chamber by performing a cycle of supplying a source gas to the process chamber and generating a second oxygen-containing gas plasma in the process chamber.

2 . The substrate processing apparatus according to claim 1 , wherein the slimming of the pattern and the forming of the oxide film are performed in the same process chamber.

3 . The substrate processing apparatus according to claim 1 , wherein the slimming of the pattern and the forming of the oxide film are consecutively performed in the same substrate processing apparatus.

4 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas to the process chamber periodically.

5 . The substrate processing apparatus according to claim 1 , wherein the pattern is a resist pattern.

6 . The substrate processing apparatus according to claim 1 , further comprising:
a heating device configured to heat the substrate at temperatures below a heat-resisting temperature of the pattern.

7 . The substrate processing apparatus according to claim 1 , further comprising:
a heating device configured to heat the substrate at temperatures of 100 degrees Celsius or less.

8 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas including organic silicon.

9 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas including aminosilane-based precursor.

10 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas containing at least one selected from the group consisting of bis-tertiary-butylamino silane, bis-dimethylamino silane, bis-diethylamino silane, dipropyl amino silane, butylamino silane, diisopropyl amino silane and tri-dimethyl amino silane.

11 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas including bis-diethylamino silane.

12 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas including diisopropyl amino silane.

13 . The substrate processing apparatus according to claim 1 , wherein the source gas supplying device is configured to supply the source gas including organic metal.

14 . The substrate processing apparatus according to claim 1 , wherein the oxygen-containing gas supplying device is configured to supply the oxygen-containing gas containing at least one selected from the group consisting of O 2 gas, NO gas, N 2 O gas, H 2 O gas and O 3 .

15 . The substrate processing apparatus according to claim 1 , wherein the oxygen-containing gas supplying device is configured to supply O 2 gas to the process chamber.

16 . The substrate processing apparatus according to claim 1 , wherein the oxide film comprises silicon oxide.

17 . The substrate processing apparatus according to claim 1 , wherein the oxide film comprises metal oxide.

18 . The substrate processing apparatus according to claim 1 , wherein the oxide film comprises silicon oxide and metal oxide.

19 . The substrate processing apparatus according to claim 1 , further comprising:
a purge gas supplying device configured to supply a purge gas to the process chamber, wherein the controller is configured to cause: (c) purging the process chamber between the slimming of the pattern and the forming of the oxide film.

20 . The substrate processing apparatus according to claim 1 , further comprising:
an evacuation device configured to evacuate a remaining gas from the process chamber, wherein the controller is configured to cause: (c) evacuating the remaining gas from the process chamber between the slimming of the pattern and the forming of the oxide film.

21 . The substrate processing apparatus according to claim 1 , wherein the plasma generating device comprises a pair of electrodes arranged to form a high frequency electric field between the pair of electrodes.

22 . The substrate processing apparatus according to claim 1 , wherein the plasma generating device is configured to generate the plasma using an RF generator supplying radio frequency power between 50-500 W at a frequency of 13.56 MHz.

23 . The substrate processing apparatus according to claim 1 , wherein the plasma generating device is configured to generate the plasma in the process chamber periodically.

24 . The substrate processing apparatus according to claim 1 , wherein the plasma generating device is configured to generate O 2 plasma in the process chamber.

25 . The substrate processing apparatus according to claim 1 , wherein the slimmed pattern has lines and spaces, and a ratio of a width of the line to a width of the space is 1:3.

26 . A substrate processing apparatus comprising:
a process chamber configured to process a substrate including a pattern on a thin film, the pattern having lines and spaces therein; a source gas supplying device configured to supply a source gas to the process chamber; an oxygen-containing gas supplying device configured to supply an oxygen-containing gas to the process chamber; a plasma generating device configured to generate a plasma in the process chamber; and a controller configured to cause: (a) slimming the pattern in the process chamber; and (b) forming an oxide film on the slimmed pattern and the thin film in the process chamber by performing a cycle of supplying a source gas to the process chamber and generating an oxygen-containing gas plasma in the process chamber.

27 . The substrate processing apparatus according to claim 26 , wherein the slimming of the pattern and the forming of the oxide film are performed in the same process chamber.

28 . The substrate processing apparatus according to claim 26 , wherein the slimming of the pattern and the forming of the oxide film are consecutively performed in the same substrate processing apparatus.

29 . The substrate processing apparatus according to claim 26 , wherein the source gas supplying device is configured to supply the source gas to the process chamber periodically.

30 . The substrate processing apparatus according to claim 26 , wherein the pattern is a resist pattern.

31 . The substrate processing apparatus according to claim 26 , further comprising:
a heating device configured to heat the substrate at temperatures below a heat-resisting temperature of the pattern.

Assignees

• Tokyo Electron Ltd

Inventors

• Hasebe Kazuhide
• Nakajima Shigeru
• Ogawa Jun
• Murakami Hiroki

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title