Collector pellicle

Patent metadata

Field	Value
Publication number	US-2019104604-A1
Application number	US-201816132990-A
Country	US
Kind code	A1
Filing date	Sep 17, 2018
Priority date	Sep 29, 2017
Publication date	Apr 4, 2019
Grant date	—

Abstract

An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.

First claim

What is claimed is:

1 . An extreme ultraviolet (EUV) source, comprising
a collector mirror; a drain; a droplet generator configured to eject a target material toward the drain; a pellicle disposed over the collector mirror, wherein the pellicle is configured to catch debris formed of the target material.

2 . The EUV source of claim 1 , wherein the pellicle is disposed between the collector mirror and a straight line between the droplet generator and the drain.

3 . The EUV source of claim 1 , wherein the pellicle is positioned outside an intermediate focus of the collector mirror.

4 . The EUV source of claim 1 , further comprising a frame assembly configured to be removably coupled to the drain.

5 . The EUV source of claim 4 , the frame assembly is operated by at least one of a rotation mechanism, sliding mechanism, hinge mechanism, and nuts and bolts.

6 . The EUV source of claim 1 , wherein the pellicle is made of an EUV light-transmitting material including silicon carbide, polysilicon, graphene, and silicon nitride.

7 . The EUV source of claim 1 , wherein the collector mirror is made of a multi-layered mirror including Mo/Si, La/B, La/B 4 C, Ru/B 4 C, Mo/B 4 C, Al 2 O 3 /B 4 C, W/C, Cr/C, and Cr/Sc.

8 . The EUV source of claim 7 , further comprising a capping layer formed on the collector mirror.

9 . The EUV source of claim 8 , wherein the capping layer includes SiO 2 , Ru, TiO 2 , and ZrO 2 .

10 . An extreme ultraviolet (EUV) source, comprising
a collector mirror; a drain; a droplet generator configured to eject a target material toward the drain; a plurality of pellicle disposed over the collector mirror, wherein one of the plurality of pellicle is configured to catch debris formed of the target material.

11 . The EUV source of claim 10 , wherein the one of the plurality of pellicle is disposed between the collector mirror and a straight line between the droplet generator and the drain.

12 . The EUV source of claim 11 , wherein other one of the plurality of pellicle is disposed away from the collector mirror.

13 . The EUV source of claim 10 , wherein the pellicle is positioned outside an intermediate focus of the collector mirror.

14 . The EUV source of claim 10 , further comprising a frame assembly configured to be removably coupled to the drain.

15 . The EUV source of claim 10 , wherein the pellicle is made of an EUV light-transmitting material including silicon carbide, polysilicon, graphene, and silicon nitride.

16 . The EUV source of claim 10 , wherein the collector mirror is made of a multi-layered mirror including Mo/Si, La/B, La/B 4 C, Ru/B 4 C, Mo/B 4 C, Al 2 O 3 /B 4 C, W/C, Cr/C, and Cr/Sc.

17 . The EUV source of claim 16 , further comprising a capping layer formed on the collector mirror.

18 . The EUV source of claim 17 , wherein the capping layer includes SiO 2 , Ru, TiO 2 , and ZrO 2 .

19 . A method of improving collector service life in an extreme ultraviolet lithographic system, comprising:
positioning a first pellicle between a straight line path of tin droplets from a droplet generator to a tin drain and a collector reflecting surface; and replacing the first pellicle with a second pellicle when the first pellicle's transmittance to extreme ultraviolet light is within an unacceptable range.

20 . The method of claim 19 , wherein the pellicle is made of an EUV light-transmitting material including silicon carbide, polysilicon, graphene, and silicon nitride.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chien Shang-Chieh
• Yang Chi
• Chung Jen-Yang
• Luo Shao-Wei
• Fu Tzung-Chi
• Chen Chun-Kuang
• Chen Li-Jui
• Cheng Po-Chung

Classifications

• G03F7/70958

  Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties · CPC title

• G03F7/70983

  Optical system protection, e.g. pellicles or removable covers for protection of mask · CPC title

• G03F7/70175

  Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source · CPC title

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title