Methods for metalizing vias within a substrate

Patent metadata

Field	Value
Publication number	US-2019024237-A1
Application number	US-201816015563-A
Country	US
Kind code	A1
Filing date	Jun 22, 2018
Priority date	Jul 20, 2017
Publication date	Jan 24, 2019
Grant date	—

Abstract

Methods of metalizing vias are disclosed. A method of metalizing at least one via includes contacting a substrate with a sacrificial metal sheet. The substrate includes a first surface, a second surface, and the at least one via extending between the first surface and the second surface and the first surface or the second surface of the substrate contacts a surface of the sacrificial metal sheet. The method further includes applying a solution comprising metal ions to the substrate and the sacrificial metal sheet such that a Galvanic displacement reaction occurs between the sacrificial metal sheet and the metal ions in the solution until the metal ions form a metal coating on at least one surface of the at least one via.

First claim

What is claimed is:

1 . A method of metalizing at least one via, the method comprising:
contacting a substrate with a sacrificial metal sheet, wherein:
the substrate comprises a first surface, a second surface, and the at least one via extending between the first surface and the second surface, and
the first surface or the second surface of the substrate contacts a surface of the sacrificial metal sheet; and
applying a solution comprising metal ions to the substrate and the sacrificial metal sheet such that a Galvanic displacement reaction occurs between the sacrificial metal sheet and the metal ions in the solution until the metal ions form a metal coating on at least a portion of one surface of the at least one via.

2 . The method of claim 1 , wherein the metal coating fills the at least one via.

3 . The method of claim 1 , wherein the metal coating partially fills the at least one via.

4 . The method of claim 1 , further comprising:
removing the substrate from the sacrificial metal sheet after causing the Galvanic displacement reaction.

5 . The method of claim 1 , wherein contacting the substrate with the sacrificial metal sheet comprises applying a mechanical force to at least one of the substrate and the sacrificial metal sheet.

6 . The method claim 1 , further comprising applying a mechanical force to at least one of the substrate and the sacrificial metal sheet to maintain a direct contact between the substrate and the sacrificial metal sheet.

7 . The method claim 1 , wherein applying the solution to the substrate and the sacrificial metal sheet comprises placing the substrate and the sacrificial metal sheet in a bath comprising the solution.

8 . The method of claim 7 , wherein causing the Galvanic displacement reaction comprises maintaining the substrate and the sacrificial metal sheet in the bath for a time period of about 1 minute to about 10 days.

9 . The method of claim 8 , further comprising maintaining the bath at a temperature of about 10° C. to about 70° C.

10 . The method of claim 1 , wherein:
the solution comprises copper ions; and the sacrificial metal sheet comprises aluminum.

11 . The method of claim 1 , wherein the sacrificial metal sheet is a solid metal sheet or a substrate comprising a metal coating.

12 . The method of claim 1 , wherein the sacrificial metal sheet is a substrate comprising a metal coating.

13 . The method of claim 1 , wherein the metal coating is selected from the group consisting of copper, gold, silver, platinum, rhodium, lead, tin, nickel, cadmium, iron, chromium, and zinc.

14 . The method of claim 1 , wherein the metal coating is copper.

15 . The method of claim 1 , wherein the substrate comprises glass.

16 . The method of claim 15 , wherein the glass is a chemically strengthened glass.

17 . The method of claim 1 , wherein the substrate comprises silicon.

18 . A method of metalizing at least one via, the method comprising:
contacting a substrate with an aluminum sheet, wherein:
the substrate comprises a first surface, a second surface, and the at least one via extending between the first surface and the second surface, and
the first surface or the second surface of the substrate contacts a surface of the aluminum sheet; and
applying a solution containing copper ions to the substrate and the aluminum sheet, resulting in a Galvanic displacement reaction between the aluminum sheet and copper ions in the solution containing copper ions until the copper ions form a copper coating on at least a portion of one surface of the at least one via.

19 . The method of claim 18 , further comprising:
removing the substrate from the aluminum sheet after applying the solution containing copper ions.

Assignees

• Corning Inc

Inventors

• Jayaraman Shrisudersan

Classifications

• H10P14/46

  using a liquid · CPC title

• H10W70/095

  of vias therein · CPC title

• H10W20/058

  by depositing on sacrificial masks, e.g. using lift-off · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title