Effective substitution of global distributed head switch cells with cluster head switch cells

Patent metadata

Field	Value
Publication number	US-2018366367-A1
Application number	US-201715625754-A
Country	US
Kind code	A1
Filing date	Jun 16, 2017
Priority date	Jun 16, 2017
Publication date	Dec 20, 2018
Grant date	—

Abstract

An IC includes a first IC portion and a second IC portion. The IC includes a first set of standard cells in the first IC portion. The IC includes a plurality of memory cells and a second set of standard cells in the second IC portion. The second set of standard cells is located in channels between the memory cells. The IC further includes a plurality of GDHS cells in the first IC portion. The GDHS cells are configured to switch power on and to switch power off to the first set of standard cells. The IC further includes a plurality of CHS cells in the first IC portion. The CHS cells are configured to switch power on and to switch power off to the second set of standard cells in the second IC portion.

First claim

What is claimed is:

1 . An integrated circuit (IC) including a first IC portion and a second IC portion, comprising:
a first set of standard cells in the first IC portion; a plurality of memory cells and a second set of standard cells in the second IC portion, the second set of standard cells being located in channels between the memory cells; a plurality of global distributed head switch (GDHS) cells in the first IC portion, the GDHS cells being configured to switch power on and to switch power off to the first set of standard cells; and a plurality of cluster head switch (CHS) cells in the first IC portion, the CHS cells being configured to switch power on and to switch power off to the second set of standard cells in the second IC portion.

2 . The IC of claim 1 , wherein the CHS cells are located on edges of the first IC portion adjacent the second IC portion.

3 . The IC of claim 1 , further comprising:
a power distribution network extending across the IC; and a redistribution layer (RDL) above the power distribution network, wherein the GDHS cells and the CHS cells are located below the power distribution network and are coupled to the power distribution network, and wherein the CHS cells are coupled to the second set of standard cells through the RDL.

4 . The IC of claim 1 , wherein the first IC portion excludes memory cells.

5 . A method of power gating of an integrated circuit (IC) including a first IC portion and a second IC portion, comprising:
power gating a first set of standard cells in the first IC portion through a plurality of global distributed head switch (GDHS) cells in the first IC portion, the GDHS cells being configured to switch power on and to switch power off to the first set of standard cells; and power gating a second set of standard cells in the second IC portion through a plurality of cluster head switch (CHS) cells in the first IC portion, the second set of standard cells being located in channels between a plurality of memory cells in the second IC portion, the CHS cells being configured to switch power on and to switch power off to the second set of standard cells in the second IC portion.

6 . The method of claim 5 , wherein the CHS cells are located on edges of the first IC portion adjacent the second IC portion.

7 . The method of claim 5 , wherein the IC comprises:
a power distribution network extending across the IC; and a redistribution layer (RDL) above the power distribution network, wherein the GDHS cells and the CHS cells are located below the power distribution network and are coupled to the power distribution network, and wherein the CHS cells are coupled to the second set of standard cells through the RDL.

8 . The method of claim 5 , wherein the first IC portion excludes memory cells.

9 . An apparatus for power gating of an integrated circuit (IC) including a first IC portion and a second IC portion, comprising:
means for power gating a first set of standard cells in the first IC portion through a plurality of global distributed head switch (GDHS) cells in the first IC portion, the GDHS cells being configured to switch power on and to switch power off to the first set of standard cells; and means for power gating a second set of standard cells in the second IC portion through a plurality of cluster head switch (CHS) cells in the first IC portion, the second set of standard cells being located in channels between a plurality of memory cells in the second IC portion, the CHS cells being configured to switch power on and to switch power off to the second set of standard cells in the second IC portion.

10 . The apparatus of claim 9 , wherein the CHS cells are located on edges of the first IC portion adjacent the second IC portion.

11 . The apparatus of claim 9 , wherein the IC comprises:
a power distribution network extending across the IC; and a redistribution layer (RDL) above the power distribution network, wherein the GDHS cells and the CHS cells are located below the power distribution network and are coupled to the power distribution network, and wherein the CHS cells are coupled to the second set of standard cells through the RDL.

12 . The apparatus of claim 9 , wherein the first IC portion excludes memory cells.

Assignees

• Qualcomm Inc

Inventors

• Arimilli Rajesh
• Sarkar Sabyasachi
• Arya Gaurav

Classifications

• H10W20/01

  Manufacture or treatment · CPC title

• G06F2115/06

  Structured ASICs · CPC title

• G06F30/39

  Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) · CPC title

• H05K1/02

  Details · CPC title

• H01L21/768

  Electricity · mapped topic