Controlled residence cmp polishing method

Patent metadata

Field	Value
Publication number	US-2018366332-A1
Application number	US-201715725936-A
Country	US
Kind code	A1
Filing date	Oct 5, 2017
Priority date	Jun 14, 2017
Publication date	Dec 20, 2018
Grant date	—

Abstract

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad, the rotating polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The polishing regions are circular sectors defined by two adjacent radial feeder grooves. The radial feeder grooves extend from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad adjusts polishing by either increasing or decreasing residence time of the polishing fluid under the wafer.

First claim

We claim:

1 . A method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:
rotating a polishing pad, the rotating polishing pad having a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, an outer edge and a radius extending from the center to the outer edge of the polishing pad; radial feeder grooves in the polishing layer separating the polishing layer into polishing regions, the polishing regions being circular sectors defined by two adjacent radial feeder grooves, the radial feeder grooves extending at least from a location adjacent the center to a location adjacent the outer edge; and each polishing region including a series of biased grooves connecting a pair of adjacent radial feeder grooves, a majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias toward the outer edge of the polishing pad, both the inward and outward biased grooves moving polishing fluid toward the outer edge of the polishing pad and either toward the wafer or away from the wafer depending upon inward bias or outward bias and the direction of rotation of the polishing pad; distributing polishing fluid onto the rotating polishing pad and into the radial feeder grooves and the series of biased grooves; and pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad to adjust polishing by selecting either i) to increase residence time of the polishing fluid under the wafer for the series of biased grooves inward bias toward the center of the rotating polishing pad or to decrease residence time of the polishing fluid under the wafer for the series of biased grooves outward bias toward the outer edge of the rotating polishing pad during counterclockwise rotation of the polishing pad, or ii) to decrease residence time of the polishing fluid under the wafer for the series of biased grooves inward bias toward the center of the rotating polishing pad or to increase residence time of the polishing fluid under the wafer for the series of biased grooves outward bias toward the outer edge of the rotating polishing pad during clockwise rotation of the polishing pad.

2 . The method of claim 1 wherein the wafer remains positioned at a location along the radius from the center of the polishing pad closer to the outer edge of the polishing pad then the center of the polishing pad to increase removal rate of at least one component of the wafer.

3 . The method of claim 1 wherein rotating the polishing pad sends used polishing fluid through a portion of the series of biased grooves over the outer edge of the polishing pad to allow flow of new polishing fluid under the wafer.

4 . The method of claim 1 wherein the series of biased grooves represent parallel grooves that increase residence time of the polishing fluid under the wafer.

5 . The method of claim 1 wherein the series of biased grooves represent parallel grooves that decrease residence time of the polishing fluid under the wafer.

6 . A method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:
rotating a polishing pad, the rotating polishing pad having a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, an outer edge and a radius extending from the center to the outer edge of the polishing pad; radial feeder grooves in the polishing layer separating the polishing layer into polishing regions, the polishing regions being circular sectors defined by two adjacent radial feeder grooves, a bisect line bisecting the polishing regions, the radial feeder grooves extending at least from a location adjacent the center to a location adjacent the outer edge; and each polishing region including a series of biased grooves connecting a pair of adjacent radial feeder grooves, a majority of the biased grooves having either an inward bias toward the center of the polishing pad at an angle of 20° to 85° from the bisect line or an outward bias toward the outer edge of the polishing pad at an angle of 95° to 160° from the bisect line, both the inward and outward biased grooves moving polishing fluid toward the outer edge of the polishing pad and either toward the wafer or away from the wafer depending upon inward bias or outward bias and the direction of rotation of the polishing pad; distributing polishing fluid onto the rotating polishing pad and into the radial feeder grooves and the series of biased grooves; and pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad to adjust polishing by selecting either i) to increase residence time of the polishing fluid under the wafer for the series of biased grooves inward bias toward the center of the rotating polishing pad or to decrease residence time of the polishing fluid under the wafer for the series of biased grooves outward bias toward the outer edge of the rotating polishing pad during counterclockwise rotation of the polishing pad, or ii) to decrease residence time of the polishing fluid under the wafer for the series of biased grooves inward bias toward the center of the rotating polishing pad or to increase residence time of the polishing fluid under the wafer for the series of biased grooves outward bias toward the outer edge of the rotating polishing pad during clockwise rotation of the polishing pad.

7 . The method of claim 6 wherein the wafer remains positioned at a location along the radius from the center of the polishing pad closer to the outer edge of the polishing pad then the center of the polishing pad to increase removal rate of at least one component of the wafer.

8 . The method of claim 6 wherein rotating the polishing pad sends used polishing fluid through a portion of the series of biased grooves over the outer edge of the polishing pad to allow flow of new polishing fluid under the wafer.

9 . The method of claim 6 wherein the series of biased grooves represent parallel grooves that increase residence time of the polishing fluid under the wafer.

10 . The method of claim 6 wherein the series of biased grooves represent parallel grooves that decrease residence time of the polishing fluid under the wafer.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Nguyen John Vu
• Tran Tony Quan
• Hendron Jeffrey James
• Stack Jeffrey Robert

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P90/15

  by making porous regions on the surface · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title