Substrate processing apparatus and substrate loading mechanism

Patent metadata

Field	Value
Publication number	US-2018366303-A1
Application number	US-201816004956-A
Country	US
Kind code	A1
Filing date	Jun 11, 2018
Priority date	Jun 16, 2017
Publication date	Dec 20, 2018
Grant date	—

Abstract

A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.

First claim

What is claimed is:

1 . A substrate processing apparatus, comprising:
a process container configured to maintain an interior of the process container in a vacuum state; a process gas supply mechanism configured to supply a process gas into the process container; a substrate loading table including a loading surface on which a target substrate is loaded in the process container; a temperature adjusting medium passage which is installed in the substrate loading table and through which a temperature adjusting medium for adjusting a temperature of the target substrate loaded on the substrate loading table flows; a temperature adjusting medium extraction mechanism configured to extract the temperature adjusting medium from the temperature adjusting medium passage; a heater installed at a position closer to the loading surface than the temperature adjusting medium passage of the substrate loading table; and a temperature controller configured to:
adjust the temperature of the target substrate to a first temperature by allowing the temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and
adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater,
wherein a process at the first temperature and a process at the second temperature are continuously performed on the target substrate.

2 . The substrate processing apparatus of claim 1 , wherein the substrate loading table includes:
a main body made of metal and in which the temperature adjusting medium passage is formed; an electrostatic chuck installed on the main body, wherein the electrostatic chuck includes the loading surface, is configured to electrostatically adsorb the target substrate, and is configured such that electrodes are installed in a dielectric material; and a cushion member installed between the electrostatic chuck and the main body, wherein the heater is printed on a rear surface of the electrostatic chuck.

3 . The substrate processing apparatus of claim 2 , wherein a thickness of the electrostatic chuck is 3 to 3.5 mm.

4 . The substrate processing apparatus of claim 1 , wherein a temperature difference between the first temperature and the second temperature is 20 to 100 degrees C.

5 . The substrate processing apparatus of claim 1 , further comprising a temperature adjusting medium supply unit configured to allow the temperature adjusting medium to flow through the temperature adjusting medium passage,
wherein a temperature adjusting medium supply path configured to supply the temperature adjusting medium to the temperature adjusting medium passage and a temperature adjusting medium discharge path configured to discharge the temperature adjusting medium from the temperature adjusting medium passage are connected to the temperature adjusting medium supply unit, and an opening/closing valve is installed in each of the temperature adjusting medium supply path and the temperature adjusting medium discharge path, and wherein the temperature adjusting medium extraction mechanism has a syringe shape having a cylinder and a piston inserted into the cylinder, is connected to positions on a side of the temperature adjusting medium passage rather than the opening/closing valves of the temperature adjusting medium supply path and the temperature adjusting medium discharge path, and is configured to extract the temperature adjusting medium in the temperature adjusting medium passage by pulling the piston while closing the opening/closing valves.

6 . The substrate processing apparatus of claim 1 , further comprising a shower head installed so as to face the substrate loading table and configured to introduce the process gas into the process container in a shower shape.

7 . The substrate processing apparatus of claim 6 , further comprising an elevating mechanism configured to move the substrate loading table up and down, and elevating pins configured to raise and lower the target substrate with respect to the loading surface,
wherein the temperature controller is configured to bring the target substrate close to the shower head to assist the heating of the target substrate by raising the elevating mechanism or by lifting up the elevating pins when the temperature of the target substrate is adjusted to the second temperature while heating the shower head.

8 . The substrate processing apparatus of claim 1 , further comprising a plasma generating mechanism configured to generate plasma in the process container,
wherein the process at the first temperature includes a process by plasma generated by the plasma generating mechanism.

9 . The substrate processing apparatus of claim 1 , wherein the process at the first temperature includes a chemical process performed by supplying a chemical gas, and the process at the second temperature includes a process of removing a reaction product generated by the chemical process.

10 . A substrate processing apparatus for removing a silicon oxide film on a target substrate having an insulating film on which a predetermined pattern is formed and the silicon oxide film is formed in a silicon portion in a bottom portion of the pattern, the substrate processing apparatus comprising:
a process container configured to maintain an interior of the process container in a vacuum state, a process gas supply mechanism configured to supply a process gas into the process container; a substrate loading table including a loading surface on which the target substrate is loaded in the process container; a temperature adjusting medium passage which is installed in the substrate loading table and through which a temperature adjusting medium for adjusting a temperature of the target substrate loaded on the substrate loading table flows; a temperature adjusting medium extraction mechanism configured to extract the temperature adjusting medium from the temperature adjusting medium passage; a heater installed at a position closer to the loading surface than the temperature adjusting medium passage of the substrate loading table; a plasma generating mechanism configured to generate plasma in the process container; a temperature controller configured to:
adjust the temperature of the target substrate to a first temperature by allowing the temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and
adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater; and
a controller configured to control a process in the substrate processing apparatus, wherein the controller is configured to control the process in the substrate processing apparatus to execute:
a first process in which a silicon-containing oxide film formed in the bottom portion of the pattern is removed through ionic anisotropic plasma etching using plasma generated by the plasma generating mechanism along with a supply of a carbon-based gas from the process gas supply mechanism to the process container;
a second process of removing residues on the silicon-containing oxide film after the ionic anisotropic plasma etching of the target substrate through a chemical etching by a chemical gas supplied from the process gas supply mechanism; and
a third

Assignees

• Tokyo Electron Ltd

Inventors

• Tsuda Einosuke
• Murakami Seishi
• Kamaishi Takayuki

Classifications

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• H10P72/0421

  for drying etching · CPC title