Semiconductor device

Patent metadata

Field	Value
Publication number	US-2018350974-A1
Application number	US-201715830809-A
Country	US
Kind code	A1
Filing date	Dec 4, 2017
Priority date	Jun 2, 2017
Publication date	Dec 6, 2018
Grant date	—

Abstract

According to one embodiment, the insulating film is provided on a side surface of a second semiconductor layer located at an end in the lateral direction of the second semiconductor layers, or a side surface of a third semiconductor layer located at an end in the lateral direction of the third semiconductor layers. The semiconductive film is provided on a side surface of the insulating film. The semiconductive film is electrically connected to the first electrode and the second electrode. The semiconductive film has a resistivity higher than a resistivity of one of the second semiconductor layers and a resistivity of one of the third semiconductor layers, and lower than a resistivity of the insulating film.

First claim

1 . A semiconductor device comprising:
a first electrode; a second electrode; a first semiconductor layer having a first conductivity type and provided on the first electrode; a plurality of second semiconductor layers having the first conductivity type and provided on the first semiconductor layer, the plurality of second semiconductor layers extending in a vertical direction connecting the first electrode and the second electrode; a plurality of third semiconductor layers having a second conductivity type, the plurality of third semiconductor layers extending in the vertical direction on the first semiconductor layer, and adjacent to the plurality of second semiconductor layers in a lateral direction crossing the vertical direction; a fourth semiconductor layer having the second conductivity type and provided on one of the plurality of third semiconductor layers; a fifth semiconductor layer having the first conductivity type and provided on a surface of the fourth semiconductor layer, the fifth semiconductor layer connected to the second electrode; a gate electrode opposed to the fourth semiconductor layer; a gate insulating film provided between the fourth semiconductor layer and the gate electrode; an insulating film provided on a side surface of a second semiconductor layer located at an end in the lateral direction of the plurality of second semiconductor layers, or a side surface of a third semiconductor layer located at an end in the lateral direction of the plurality of third semiconductor layers; and a semiconductive film provided on a side surface of the insulating film, the semiconductive film electrically connected to the first electrode and the second electrode, the semiconductive film having a resistivity higher than a resistivity of one of the plurality of second semiconductor layers and a resistivity of one of the plurality of third semiconductor layers, and lower than a resistivity of the insulating film, the insulating film being provided between the semiconductive film and one of the second semiconductor layer located at the end or the third semiconductor layer located at the end, the semiconductive film not contacting the second semiconductor layer and the third semiconductor layer.

2 . The device according to claim 1 , wherein the semiconductive film has contact with the first semiconductor layer.

3 . The device according to claim 1 , wherein
the fourth semiconductor layer has contact with the second electrode, and the semiconductive film has contact with the fourth semiconductor layer.

4 . The device according to claim 1 , wherein the insulating film continuously surrounds a region where the second semiconductor layers and the third semiconductor layers are disposed.

5 . The device according to claim 1 , wherein the semiconductive film continuously surrounds a region where the second semiconductor layers and the third semiconductor layers are disposed.

6 . The device according to claim 1 , wherein the semiconductive film is a silicon nitride film.

7 . The device according to claim 1 , wherein the semiconductive film is a polycrystalline silicon film.

8 . The device according to claim 1 , wherein the insulating film is a silicon oxide film.

9 . The device according to claim 1 , further comprising:
resin provided on a side surface of the semiconductive film.

10 . The device according to claim 1 , wherein
the insulating film is provided on a sidewall of a trench extending in the vertical direction to reach the first semiconductor layer, and the semiconductive film is provided on a side surface of the insulating film in the trench.

11 . The device according to claim 10 , further comprising:
a sixth semiconductor layer provided outside the trench and on the first semiconductor layer.

12 . The device according to claim 11 , wherein the sixth semiconductor layer is a first conductivity type semiconductor layer.

13 . The device according to claim 10 , further comprising:
an insulator provided inside the semiconductive film in the trench.

14 . The device according to claim 13 , wherein the insulator is a silicon oxide film.

15 . The device according to claim 1 , wherein a first conductivity type impurity concentration of the first semiconductor layer is higher than a first conductivity type impurity concentration of one of the plurality of second semiconductor layers.

16 . The device according to claim 1 , wherein a first conductivity type impurity concentration of the fifth semiconductor layer is higher than a first conductivity type impurity concentration of one of the plurality of second semiconductor layers.

17 . The device according to claim 1 , wherein the fourth semiconductor layer on a termination side extends to an end of the device.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Okumura Hideki
• Ono Syotaro
• Kusunoki Naoki
• Sato Shingo

Classifications

• H01L29/407

  Electricity · mapped topic

• H01L29/408

  Electricity · mapped topic

• H01L29/0634

  Electricity · mapped topic

• H01L29/7811 Primary

  Electricity · mapped topic

• H10D62/111

  Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures · CPC title