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Semiconductor device having element region and termination region surrounding element region
US9219142B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9219142-B2 |
| Application number | US-201414491332-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2014 |
| Priority date | Sep 24, 2013 |
| Publication date | Dec 22, 2015 |
| Grant date | Dec 22, 2015 |
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- Title
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Abstract
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A semiconductor device includes a semiconductor substrate having an element region and a termination region. The element region includes a first body region having a first conductivity type, a first drift region having a second conductivity type, and first floating regions having the first conductivity type. The termination region includes FLR regions, a second drift region and second floating regions. The FLR regions have the first conductivity type and surrounds the element region. The second drift region has the second conductivity type, makes contact with and surrounds the FLR regions. The second floating regions have the first conductivity type and is surrounded by the second drift region. The second floating regions surround the element region. At least one of the second floating regions is placed at an element region side relative to the closest one of the FLR regions to the element region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising a semiconductor substrate having an element region and a termination region surrounding the element region, wherein: the element region includes a first body region having a first conductivity type and being placed in a range facing a top face of the semiconductor substrate, a first drift region having a second conductivity type and making contact with a bottom face of the first body region, the second conductivity type…
Assignees
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Classifications
Electricity · mapped topic
- H10D30/668Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9219142B2 cover?
- A semiconductor device includes a semiconductor substrate having an element region and a termination region. The element region includes a first body region having a first conductivity type, a first drift region having a second conductivity type, and first floating regions having the first conductivity type. The termination region includes FLR regions, a second drift region and second floating …
- Who is the assignee on this patent?
- Toyota Motor Co Ltd, Denso Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/668. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).