Resonator element, resonator, electronic device, electronic apparatus, mobile body and method of manufacturing resonator element
US-9450166-B2 · Sep 20, 2016 · US
Baw resonator and baw filter for reducing harmonic distortion
US2018294792A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018294792-A1 |
| Application number | US-201815876791-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 22, 2018 |
| Priority date | Apr 5, 2017 |
| Publication date | Oct 11, 2018 |
| Grant date | — |
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Abstract
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A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.
First claim
Opening claim text (preview).
What is claimed is: 1 . A bulk acoustic wave (BAW) resonator, comprising: a substrate; a first BAW resonator comprising a first air cavity disposed in the substrate, and further comprising a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator comprising a second air cavity disposed in the substrate, and further comprising a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and comprises polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator. 2 . The BAW resonator of claim 1 , wherein the compensation capacitor circuit comprises capacitance set to compensate for asymmetry of a parallel resonance circuit formed by the first BAW resonator and the second BAW resonator. 3 . The BAW resonator of claim 1 , wherein the compensation capacitor circuit comprises a first compensation capacitor, and the first compensation capacitor comprises the first electrode of the first BAW resonator, a dielectric layer stacked on the first electrode of the first BAW resonator, and a metal pad connected to the second electrode of the second BAW resonator and stacked on the dielectric layer to be overlapped with the first electrode of the first BAW resonator. 4 . The BAW resonator of claim 1 , wherein the compensation capacitor circuit comprises a first compensation capacitor, and the first compensation capacitor comprises the first electrode of the second BAW resonator, a dielectric layer stacked on the first electrode of the second BAW resonator; and a metal pad connected to the second electrode of the first BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the second BAW resonator. 5 . The BAW resonator of claim 4 , wherein the compensation capacitor circuit further comprises a second compensation capacitor, and the second compensation capacitor comprises the first electrode of the second BAW resonator, a dielectric layer stacked on the first electrode of the second BAW resonator, and a metal pad connected to the second electrode of the first BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the second BAW resonator. 6 . The BAW resonator of claim 4 , wherein the compensation capacitor circuit further comprises a second compensation capacitor, and the second compensation capacitor comprises the first electrode of the first BAW resonator, a dielectric layer stacked on the first electrode of the first BAW resonator, and a metal pad connected to the second electrode of the second BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the first BAW resonator. 7 . The BAW resonator of claim 3 , wherein the compensation capacitor circuit further comprises a second compensation capacitor, and the second compensation capacitor comprises the first electrode of the second BAW resonator, a dielectric layer stacked on the first electrode of the second BAW resonator, and a metal pad connected to the second electrode of the first BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the second BAW resonator. 8 . The BAW resonator of claim 3 , wherein the compensation capacitor circuit further comprises a second compensation capacitor, and the second compensation capacitor comprises the first electrode of the first BAW resonator, a dielectric layer stacked on the first electrode of the first BAW resonator, and a metal pad connected to the second electrode of the second BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the first BAW resonator. 9 . The BAW resonator of claim 3 , wherein the compensation capacitor circuit further comprises a first compensation capacitor circuit connected in parallel to the first compensation capacitor, and comprising one of a fixed capacitance and a variable capacitance. 10 . A BAW filter, comprising: a series BAW resonance circuit comprising series BAW resonators disposed on a substrate and connected in series between a first terminal and a second terminal; and a shunt BAW resonance circuit comprising shunt BAW resonators disposed on the substrate and connected between respective electrodes of the series BAW resonators and a ground, wherein one of the shunt BAW resonators comprises a first BAW resonator comprising a first air cavity disposed in the substrate, and further comprising a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity, a second BAW resonator comprising a second air cavity disposed in the substrate, and further comprising a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, the second BAW resonator being connected in parallel to the first BAW resonator and comprising polarities that are opposite of polarities of the first BAW resonator, and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator. 11 . The BAW filter of claim 10 , wherein the compensation capacitor circuit comprises capacitance set to compensate for asymmetry of a parallel resonance circuit formed by the first BAW resonator and the second BAW resonator. 12 . The BAW filter of claim 10 , wherein the compensation capacitor circuit comprises a first compensation capacitor, and the first compensation capacitor comprises the first electrode of the first BAW resonator, a dielectric layer stacked on the first electrode of the first BAW resonator, and a metal pad connected to the second electrode of the second BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the first BAW resonator. 13 . The BAW filter of claim 10 , wherein the compensation capacitor circuit comprises a first compensation capacitor, and the first compensation capacitor comprises the first electrode of the second BAW resonator, a dielectric layer stacked on the first electrode of the second BAW resonator, and a metal pad connected to the second electrode of the first BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the second BAW resonator. 14 . The BAW filter of claim 13 , wherein the compensation capacitor circuit further comprises a second compensation capacitor, and the second compensation capacitor comprises the first electrode of the second BAW resonator, a dielectric layer stacked on the first electrode of the second BAW resonator, and a metal pad connected to the second electrode of the first BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the second BAW resonator. 15 . The BAW filter of claim 13 , wherein the compensation capacitor circuit further comprises a second compensation capacitor, and the second compensation capacitor comprises the first electrode of the first BAW resonator, a dielectric layer stacked on the first electrode of the first BAW resonator, and a metal pad connected to the second electrode of the second BAW resonator, and stacked on the dielectric layer to be overlapped with the first electrode of the first BAW resonator. 16 . The BAW filter of claim 12 , wherein the compensation capacitor circuit further compr
Assignees
Inventors
Classifications
- H03H9/02086Primary
Means for compensation or elimination of undesirable effects · CPC title
Air-gaps · CPC title
including passive elements (H03H9/545 takes precedence) · CPC title
implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type · CPC title
- H03H9/02133Primary
of stress · CPC title
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- What does patent US2018294792A1 cover?
- A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second pie…
- Who is the assignee on this patent?
- Samsung Electro Mech
- What technology area does this patent fall under?
- Primary CPC classification H03H9/02086. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Oct 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).