Gas supply member and gas processing apparatus

Patent metadata

Field	Value
Publication number	US-2018274094-A1
Application number	US-201815922070-A
Country	US
Kind code	A1
Filing date	Mar 15, 2018
Priority date	Mar 21, 2017
Publication date	Sep 27, 2018
Grant date	—

Abstract

A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

First claim

What is claimed is:

1 . A gas supply member, comprising:
a straight flow path having a straight-line shape and including a first end to be supplied with gas; a gas discharge port branched from the straight flow path; and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

2 . The gas supply member of claim 1 , further comprising a foreign substance accommodation region configured to face the gas circulation path.

3 . The gas supply member of claim 2 , wherein the foreign substance accommodation region is configured by a portion of the gas circulation path that extends in a direction outward of the gas circulation path when viewed in a direction orthogonal to a circulation direction of the gas.

4 . The gas supply member of claim 3 , wherein the straight flow path extends in a vertical direction, the gas circulation path is configured to circulate the gas in the vertical direction, and the foreign substance accommodation region is located at a lower portion of the gas circulation path.

5 . The gas supply member of claim 1 , wherein the gas circulation path has an annular shape when viewed in a direction orthogonal to a circulation direction of the gas.

6 . A gas processing apparatus that performs processing, in a vertical reaction vessel in which a vacuum atmosphere is formed, by heating a plurality of substrates held in a shelf shape on a substrate holder and supplying a processing gas to the substrates, comprising:
a gas supply member including a straight flow path having a straight-line shape along a vertical direction and a first end to be supplied with the processing gas, a gas discharge port branched from the straight flow path and having an opening facing a horizontal direction, and a processing gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path and configured to collect foreign substances contained in the processing gas supplied to the straight flow path.

7 . The gas processing apparatus of claim 6 , wherein the reaction vessel is a double tube including:
an inner tube opened on an upper side; and an outer tube configured to surround the inner tube and provided with a ceiling of the reaction vessel, wherein the straight flow path is provided inside the inner tube, and wherein the processing gas circulation path is provided between an upper end of the inner tube and the ceiling of the outer tube.

8 . The gas processing apparatus of claim 7 , wherein the gas supply member includes a foreign substance accommodation region that is configured to face the processing gas circulation path and provided between a side wall of the inner tube and a side wall of the outer tube.

9 . A gas processing apparatus that performs processing, in a reaction vessel in which a vacuum atmosphere is formed, by supplying a processing gas to a substrate mounted on one surface side of a rotary table and heating the substrate, comprising:
a gas supply member including a straight flow path having a straight-line shape to extend in a direction intersecting with a rotation direction of the rotary table on one side of the rotary table and a first end to be supplied with the processing gas from, a gas discharge port branched from the straight flow path and having an opening facing the one side of the rotary table, and a processing gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the processing gas supplied to the straight flow path.

Assignees

• Tokyo Electron Ltd

Inventors

• Ikeda Kyoko

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H01J37/32816

  Pressure · CPC title