Method for preparing photomask blank, photomask blank, method for preparing photomask, photomask, and metallic chromium target

Patent metadata

Field	Value
Publication number	US-2018224737-A1
Application number	US-201815883538-A
Country	US
Kind code	A1
Filing date	Jan 30, 2018
Priority date	Feb 9, 2017
Publication date	Aug 9, 2018
Grant date	—

Abstract

A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on the photomask is minimized.

First claim

1 . A method for preparing a photomask blank comprising a transparent substrate and a silicon-containing film and a chromium-containing film disposed contiguous to each other, or a transparent substrate and a chromium-containing film disposed contiguous thereto, the silicon-containing film being composed of a silicon-containing material selected from silicon alone, a silicon compound consisting of silicon and at least one light element selected from oxygen, nitrogen and carbon, and a transition metal silicon compound consisting of at least one transition metal selected from titanium, vanadium, cobalt, nickel, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, silicon, and at least one light element selected from oxygen, nitrogen and carbon, the chromium-containing film being composed of a chromium-containing material,
the method comprising the step of depositing the chromium-containing film by sputtering a metallic chromium target having a silver content of up to 1 ppm.

2 . The method of claim 1 , further comprising the step of selecting a metallic chromium target which has been confirmed by compositional analysis to have a silver content of up to 1 ppm, only the selected metallic chromium target being used in the sputter deposition step.

3 . The method of claim 1 wherein the metallic chromium target has a chromium content of at least 99.99% by weight.

4 . The method of claim 1 wherein the metallic chromium target contains lead, copper, tin and gold each in a content of up to 1 ppm.

5 . The method of claim 1 wherein
the photomask blank comprises a transparent substrate and a silicon-containing film and a chromium-containing film disposed contiguous to each other and stacked in order from the substrate side, the silicon-containing film is a halftone phase shift film, and the chromium-containing film is a light-shielding film, or
the photomask blank comprises a transparent substrate and a chromium-containing film disposed contiguous thereto, the chromium-containing film is a light-shielding film.

6 . The method of claim 1 wherein the photomask blank comprises a transparent substrate and a silicon-containing film and a chromium-containing film disposed contiguous to each other, the silicon-containing film is a halftone phase shift film having a transmittance of 5% to less than 30% with respect to exposure light, and the chromium-containing film is a light-shielding film having an optical density of 1 to less than 3 with respect to exposure light.

7 . The method of claim 1 wherein the photomask blank comprises a transparent substrate and a silicon-containing film and a chromium-containing film disposed contiguous to each other, the silicon-containing film is a light-shielding film having an optical density of at least 2.5 with respect to exposure light, and the chromium-containing film has a sheet resistance of up to 15,000 Ω/□.

8 . The method of claim 1 , further comprising the steps of:
assigning a criterion value of judgment of silver content to one or more substrate or films selected from the transparent substrate and the silicon-containing film and the chromium-containing film disposed contiguous to each other, or one or more substrate or films selected from the transparent substrate and the chromium-containing film disposed contiguous thereto, and sorting photomask blanks having a silver content of not more than the criterion value as pass blanks and photomask blanks having a silver content of more than the criterion value as reject blanks.

9 . The method of claim 1 wherein the photomask blank further comprises a resist film.

10 . The method of claim 9 , further comprising the steps of:
assigning a criterion value of judgment of silver content to one or more substrate or films selected from the transparent substrate, the silicon-containing film and the chromium-containing film disposed contiguous to each other, and the resist film, or one or more substrate or films selected from the transparent substrate, the chromium-containing film disposed contiguous thereto, and the resist film, and sorting photomask blanks having a silver content of not more than the criterion value as pass blanks and photomask blanks having a silver content of more than the criterion value as reject blanks.

11 . The method of claim 8 wherein the criterion value is a silver content as measured by inductively coupled plasma mass spectrometry (ICP-MS) and a content of 1 ppm is applied as the criterion.

12 . A photomask blank prepared by the method of claim 1 .

13 . A photomask blank comprising a transparent substrate and a chromium-containing film, the chromium-containing film having a silver content of up to 1 ppm.

14 . The photomask blank of claim 13 wherein all the substrate and the film included in the photomask blank have a silver content of up to 1 ppm.

15 . A method for preparing a photomask, comprising the step of using the photomask blank obtained by the method of claim 1 .

16 . A method for preparing a photomask, comprising the step of using the photomask blank which is sorted as pass blank by the method of claim 8 .

17 . A photomask prepared from the photomask blank of claim 12 .

18 . A metallic chromium target for use in depositing the chromium-containing film in the photomask blank of claim 1 , the target having a silver content of up to 1 ppm.

19 . A metallic chromium target for use in sputter deposition of a chromium-containing film to construct a photomask blank, the target having a silver content of up to 1 ppm.

Assignees

• Shinetsu Chemical Co

Inventors

• Inazuki Yukio
• Sasamoto Kouhei
• Yuri Tsutomu

Classifications

• C01B21/0823

  Silicon oxynitrides · CPC title

• C22C27/06

  Alloys based on chromium · CPC title

• C01B21/0821

  Oxynitrides of metals, boron or silicon · CPC title

• G03F1/32 Primary

  Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof · CPC title

• C01B33/06 Primary

  Metal silicides (alloys C22) · CPC title