Treatment liquid and pattern forming method

Patent metadata

Field	Value
Publication number	US-2018217499-A1
Application number	US-201815937873-A
Country	US
Kind code	A1
Filing date	Mar 28, 2018
Priority date	Sep 30, 2015
Publication date	Aug 2, 2018
Grant date	—

Abstract

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.

First claim

What is claimed is:

1 . A treatment liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and containing an organic solvent, wherein the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.

2 . The treatment liquid according to claim 1 ,
wherein the treatment liquid is a rinsing liquid.

3 . The treatment liquid according to claim 2 ,
wherein the first organic solvent includes a hydrocarbon-based solvent.

4 . The treatment liquid according to claim 3 ,
wherein the first organic solvent includes a hydrocarbon-based solvent having 10 or more carbon atoms.

5 . The treatment liquid according to claim 3 ,
wherein the hydrocarbon-based solvent includes undecane.

6 . The treatment liquid according to claim 1 ,
wherein the second organic solvent includes a ketone-based solvent.

7 . The treatment liquid according to claim 6 ,
wherein the ketone-based solvent includes an acyclic ketone.

8 . A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a treating step of treating the exposed resist film with the treatment liquid according to claim 1 .

9 . A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a treating step of treating the exposed resist film with the treatment liquid according to claim 1 , wherein the treating step includes: a developing step of carrying out development with a developer; and a rinsing step of carrying out washing with a rinsing liquid, and the rinsing liquid is the treatment liquid.

10 . The pattern forming method according to claim 9 ,
wherein the developer includes an ester-based solvent.

11 . The pattern forming method according to claim 10 ,
wherein the ester-based solvent is a solvent including at least one selected from the group consisting of butyl acetate, amyl acetate, isoamyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, pentyl propionate, hexyl propionate, heptyl propionate, butyl butanoate, and butyl isobutanoate.

12 . The treatment liquid according to claim 4 ,
wherein the hydrocarbon-based solvent includes undecane.

13 . The treatment liquid according to claim 2 ,
wherein the second organic solvent includes a ketone-based solvent.

14 . The treatment liquid according to claim 3 ,
wherein the second organic solvent includes a ketone-based solvent.

15 . The treatment liquid according to claim 4 ,
wherein the second organic solvent includes a ketone-based solvent.

16 . The treatment liquid according to claim 5 ,
wherein the second organic solvent includes a ketone-based solvent.

17 . The treatment liquid according to claim 13 ,
wherein the ketone-based solvent includes an acyclic ketone.

18 . The treatment liquid according to claim 14 ,
wherein the ketone-based solvent includes an acyclic ketone.

19 . The treatment liquid according to claim 1 ,
wherein a content of the first organic solvent is 50% by mass or more, with respect to a total mass of the treatment liquid.

20 . The pattern forming method according to claim 9 ,
wherein the actinic ray-sensitive or radiation-sensitive resin composition has a resin which has a repeating unit having a group capable of decomposing by an action of an acid to generate a carboxyl group.

Assignees

• Fujifilm Corp

Inventors

• Hirano Shuji
• Tsubaki Hideaki
• Tsuchihashi Toru
• Nihashi Wataru
• Yamamoto Kei

Classifications

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• C11D7/5022

  containing oxygen · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/0758

  with silicon- containing groups in the side chains · CPC title