Electrical Testing for Panel Characterization and Defect Screening
US-2024402237-A1 · Dec 5, 2024 · US
US2018202943A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018202943-A1 |
| Application number | US-201815865130-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 8, 2018 |
| Priority date | Jan 26, 2009 |
| Publication date | Jul 19, 2018 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.
Opening claim text (preview).
What is claimed is: 1 . A system configured to detect defects on a wafer, comprising: an inspection subsystem configured to generate output for a wafer by scanning the wafer using first and second optical states of the inspection subsystem, wherein the first and second optical states are defined by different values for at least one optical parameter of the inspection subsystem; and a computer subsystem configured to generate first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state, combine the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer, and detect defects on the wafer using the additional image data.
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title
the measurements made in two or more directions, angles, positions · CPC title
Electricity · mapped topic
Structural arrangements therefor · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.