Epitaxial silicon wafer

Patent metadata

Field	Value
Publication number	US-2018197751-A1
Application number	US-201715399981-A
Country	US
Kind code	A1
Filing date	Jan 6, 2017
Priority date	Jan 6, 2017
Publication date	Jul 12, 2018
Grant date	—

Abstract

An epitaxial silicon wafer includes a silicon wafer consisting of a COP region in which a nitrogen concentration is 1×10 8 −3×10 9 atoms/cm 3 , and an epitaxial silicon film formed on the silicon wafer. When heat treatment for evaluation is applied, a density of BMD formed inside the silicon wafer is 1×10 8 −3×10 9 atoms/cm 3 over the entire radial direction of the silicon wafer. An average density of the BMD formed in an outer peripheral region of the silicon wafer which is a 1-10 mm range separated inward from an outermost periphery thereof is lower than the average density of the BMD formed in a center region. A variation in the BMD density in the outer peripheral region is 3 or less, and a residual oxygen concentration in the outer peripheral region is 8×10 17 atoms/cm 3 or more.

First claim

1 . An epitaxial silicon wafer comprising:
a silicon wafer consisting of a COP crystal oriented particle region in which a nitrogen concentration is from 1×10 12 atoms/cm 3 to 1×10 13 atoms/cm 3 ; and an epitaxial silicon film formed on a surface of the silicon wafer, wherein when treatment for evaluating oxygen precipitates is applied to the epitaxial silicon wafer, a density of oxygen precipitates formed inside the silicon wafer is from 1×10 8 atoms/cm 3 to 3×10 9 atoms/cm 3 over the entire radial direction of the silicon wafer, an average density of the oxygen precipitates formed in an outer peripheral region of the silicon wafer within 1-10 mm separated inward from an outermost periphery thereof is lower than an average density of the oxygen precipitates formed in a center region of the silicon wafer which is the region of the silicon wafer other than the outer peripheral region, a value obtained by dividing a difference between a maximum value and a minimum value of the density of the oxygen precipitates in the outer peripheral region by an average value of the density of the oxygen precipitates in the outer peripheral region is 3 or less, and a residual oxygen concentration in the outer peripheral region is 8×10 atoms/cm 3 or more as measured by Old-ASTM_F121, 1979.

2 . The epitaxial silicon wafer as claimed in claim 1 , wherein
the maximum value of the density of the oxygen precipitates exists in 6 mm to 10 mm a region separated inward from the outermost periphery from 6 mm to 10 mm, and the minimum value of the density of the oxygen precipitates exists in a 0 less than 6 mm a region separated inward from the outermost periphery from 0 to less than 6 mm.

3 . The epitaxial silicon wafer as claimed in claim 2 , wherein
the density of the oxygen precipitates in the outer peripheral region is gradually reduced toward the outermost periphery of the silicon wafer.

4 . The epitaxial silicon wafer as claimed in claim 1 , wherein
when heat treatment for evaluating oxidation-induced stacking fault is applied, the density of oxidation-induced stacking fault observed on the back surface of the epitaxial silicon wafer is 100/cm 2 or less.

5 . The epitaxial silicon wafer as claimed in claim 1 , wherein
the silicon wafer is cut out from a silicon single crystal ingot whose oxygen concentration is adjusted in a range of from 8×1017 atoms/cm 3 to 14×10 17 atoms/cm 3 or less, as measured by Old-ASTM_F121, 1979.

6 . The epitaxial silicon wafer as claimed in claim 1 , wherein
a diameter of the epitaxial silicon wafer is 300 mm or more.

7 . The epitaxial silicon wafer as claimed in claim 1 , wherein the silicon wafer is cut out from a straight body section of a silicon single crystal ingot having a diameter 1.02 to 1.07 times larger than a target diameter and processed into the target diameter.

Assignees

• Sumco Corp

Inventors

• Koike Yasuo
• Katano Tomokazu
• Ono Toshiaki

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P36/20 Primary

  Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body · CPC title