Thermoelectric material, thermoelectric element, optical sensor, and method for manufacturing thermoelectric material

Patent metadata

Field	Value
Publication number	US-2018190891-A1
Application number	US-201615740131-A
Country	US
Kind code	A1
Filing date	Jun 1, 2016
Priority date	Jun 30, 2015
Publication date	Jul 5, 2018
Grant date	—

Abstract

This invention relates to a thermoelectric material constituted of nanostructures and a thermoelectric element and an optical sensor including the same, as well as to a method for manufacturing a thermoelectric material constituted of nanostructures. An object of the present disclosure is to achieve better thermoelectric characteristics of the thermoelectric material containing nanoparticles. The thermoelectric material includes a first material having a band gap and a second material different from the first material. The thermoelectric material contains a plurality of nanoparticles distributed in a base material which is a mixture of the first material and the second material. A composition of the second material in the thermoelectric material is not lower than 0.01 atomic % and not higher than 2.0 atomic % of the thermoelectric material.

First claim

1 : A thermoelectric material comprising:
a first material having a band gap; a second material different from the first material; and a plurality of nanoparticles distributed in a mixture of the first material and the second material, a composition of the second material in the thermoelectric material being not lower than 0.01 atomic % and not higher than 2.0 atomic % of the thermoelectric material.

2 : The thermoelectric material according to claim 1 , wherein
each of the plurality of nanoparticles has a particle size not smaller than 0.1 nm and not greater than 5 nm.

3 : The thermoelectric material according to claim 2 , wherein
an interparticle distance between any two of the plurality of nanoparticles is not smaller than 0.1 nm and not greater than 3 nm.

4 : The thermoelectric material according to claim 1 , wherein
the first material contains a first element and a second element, the first element is lower in melting point in being alloyed with the second material than the second element, and a composition ratio of the second element to the first element is not higher than 1.5.

5 : The thermoelectric material according to claim 4 , wherein
the first element is defined as Ge, the second element is defined as Si, the second material is defined as Au, Cu, B, or Al, and the composition ratio is not lower than 0.16.

6 : A thermoelectric element comprising:
the thermoelectric material according to claim 1 , the thermoelectric material being doped to a p-type or an n-type; and a pair of electrodes joined to a first end surface of the thermoelectric material and a second end surface opposed to the first end surface, respectively.

7 : A thermoelectric element comprising:
the thermoelectric material according to claim 1 , the thermoelectric material being doped to a p-type or an n-type; and a pair of electrodes arranged such that the electrodes are spaced apart from each other on an identical main surface of the thermoelectric material and joined to the thermoelectric material.

8 : A thermoelectric element comprising:
a first thermoelectric material doped to a p-type; a second thermoelectric material doped to an n-type, the first thermoelectric material and the second thermoelectric material being composed of the thermoelectric material according to claim 1 , the first thermoelectric material and the second thermoelectric material each having a first end surface and a second end surface located opposite to the first end surface, the first thermoelectric material and the second thermoelectric material being joined to each other at the first end surfaces; and a pair of electrodes joined to the second end surface of the first thermoelectric material and the second end surface of the second thermoelectric material, respectively.

9 : An optical sensor comprising:
an absorber which absorbs light and converts light to heat; and a thermoelectric conversion portion connected to the absorber, the thermoelectric conversion portion including the thermoelectric material according to claim 1 , the thermoelectric material being doped to a p-type or an n-type.

10 : A method of manufacturing a thermoelectric material including a first material having a band gap, a second material different from the first material and a plurality of nanoparticles distributed in a mixture of the first material and the second material, the first material containing a first element and a second element, the first element being lower in melting point in being alloyed with the second material than the second element, the method comprising:
alternately stacking a first layer containing the second material and the first element, and a second layer containing the second element but not containing the second material, a composition of the second material in the thermoelectric material being not lower than 0.01 atomic % and not higher than 2.0 atomic % of the thermoelectric material.

11 : The method according to claim 10 , further comprising forming the plurality of nanoparticles in the mixture by annealing a stack obtained by stacking the first layer and the second layer.

12 : The method according to claim 11 , wherein
a temperature for annealing is not lower than 300° C. and not higher than 800° C.

Assignees

• Sumitomo Electric Industries

Inventors

• Adachi Masahiro
• Matsuura Takashi

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01L35/22

  Electricity · mapped topic

• H01L35/26 Primary

  Electricity · mapped topic

• G01J1/0407

  Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings · CPC title

• H01L35/34

  Electricity · mapped topic