Thermoelectric material, thermoelectric module, optical sensor, and method for manufacturing thermoelectric material
US-2016300994-A1 · Oct 13, 2016 · US
Thermoelectric device
US2016240761A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016240761-A1 |
| Application number | US-201615018024-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 8, 2016 |
| Priority date | Feb 16, 2015 |
| Publication date | Aug 18, 2016 |
| Grant date | — |
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Abstract
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A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.
First claim
Opening claim text (preview).
What is claimed is: 1 . A thermoelectric device comprising: a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer, wherein the SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37; and the stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer. 2 . The thermoelectric device according to claim 1 , wherein the SiGe layer is in contact with each of both surfaces of the Si layer. 3 . The thermoelectric device according to claim 1 , wherein an additive of a group XIII element or group XV element is added to at least one of the SiGe layers in the plurality of stacked structures. 4 . The thermoelectric device according to claim 1 , wherein at least one of the rocking-curve half widths of a 0th order peak and satellite peaks thereof corresponding to the average lattice constant of the superlattice of the stacked thin film observed by X-ray diffraction measurement is 0.1° or less. 5 . The thermoelectric device according to claim 1 , wherein in X-ray diffraction measurement of the stacked thin film, third or higher-order satellite peaks due to the superlattice of the stacked thin film are observed. 6 . The thermoelectric device according to claim 1 , wherein each of the Si layer and the SiGe layer has a thickness of 1 nm or more and 10 nm or less.
Assignees
Inventors
Classifications
Electricity · mapped topic
- H01L35/26Primary
Electricity · mapped topic
comprising compounds containing germanium or silicon · CPC title
- H10N10/857Primary
comprising compositions changing continuously or discontinuously inside the material · CPC title
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Frequently asked questions
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- What does patent US2016240761A1 cover?
- A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L35/26. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 18 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).