Thermoelectric conversion material and production method therefor

Patent metadata

Field	Value
Publication number	US-9431593-B2
Application number	US-201414428141-A
Country	US
Kind code	B2
Filing date	Jul 25, 2014
Priority date	Aug 9, 2013
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

The present invention provides a thermoelectric conversion material capable of being produced in a simplified manner and at a low cost and excellent in thermoelectric conversion characteristics and flexibility, and provides a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid comprises a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

First claim

The invention claimed is:

1. A thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin, and an ionic liquid,
wherein the blending amount of the thermoelectric semiconductor fine particles is from 30 to 99% by mass in the thermoelectric semiconductor composition,
wherein the blending amount of the heat-resistant resin is from 0.5 to 20% by mass in the thermoelectric semiconductor composition, and
wherein the blending amount of the ionic liquid is from 0.01 to 50% by mass in the thermoelectric semiconductor composition.

2. The thermoelectric conversion material according to claim 1 , wherein the blending amount of the ionic liquid is from 0.5 to 30% by mass in the thermoelectric semiconductor composition.

3. The thermoelectric conversion material according to claim 1 , wherein the cation component of the ionic liquid contains at least one selected from a pyridinium cation and its derivatives, and an imidazolium cation and its derivatives.

4. The thermoelectric conversion material according to claim 1 , wherein the anion component of the ionic liquid contains a halide anion.

5. The thermoelectric conversion material according to claim 4 , wherein the halide anion contains at least one selected from Cl − , Br − and I − .

6. The thermoelectric conversion material according to claim 1 , wherein the heat-resistant resin is at least one selected from polyamide resins, polyamideimide resins, polyimide resins and epoxy resins.

7. The thermoelectric conversion material according to claim 1 , wherein the blending amount of the thermoelectric semiconductor fine particles is from 50 to 96% by mass in the thermoelectric semiconductor composition.

8. The thermoelectric conversion material according to claim 1 , wherein the mean particle size of the thermoelectric semiconductor fine particles is from 10 nm to 10 μm.

9. The thermoelectric conversion material according to claim 1 , wherein the thermoelectric semiconductor fine particles are fine particles of a bismuth-tellurium-based thermoelectric semiconductor material.

10. The thermoelectric conversion material according to claim 1 , wherein the support is a plastic film.

11. The thermoelectric conversion material according to claim 10 , wherein the plastic film is at least one selected from polyimide films, polyamide films, polyether imide films, polyaramid films and polyamideimide films.

12. A method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid, the method comprising:
applying the thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an ionic liquid onto the support, followed by drying it, to form a thin film thereon and
annealing the thin film,
wherein the blending amount of the thermoelectric semiconductor fine particles is from 30 to 99% by mass in the thermoelectric semiconductor composition,
wherein the blending amount of the heat-resistant resin is from 0.5 to 20% by mass in the thermoelectric semiconductor composition, and
wherein the blending amount of the ionic liquid is from 0.01 to 50% by mass in the thermoelectric semiconductor composition.

13. The method for producing a thermoelectric conversion material according to claim 12 , wherein the support is a plastic film.

14. The method for producing a thermoelectric conversion material according to claim 12 , wherein the annealing treatment is carried out in an inert atmosphere, in a reducing atmosphere, or in a vacuum condition, and the annealing treatment is carried out at a temperature from 100 to 500° C. for a few minutes to several tens hours.

15. The thermoelectric conversion material according to claim 1 , wherein the heat-resistant resin is selected from the group consisting of polyamide resins, polyamideimide resins, polyimide resins, polyether imide resins, polybenzoxazole resins, polybenzimidazole resins, and copolymers thereof.

16. The thermoelectric conversion material according to claim 1 , wherein the decomposition temperature of the heat-resistant resin is 300° C. or higher.

17. The thermoelectric conversion material according to claim 1 , wherein the mass reduction in the heat-resistant resin at 300° C. in thermogravimetry (TG) is 10% or less.

18. The thermoelectric conversion material according to claim 1 , wherein the support is a polyimide film, a polyamide film, a polyether imide film, a polyaramid film, or a polyamideimide film.

Assignees

• Lintec Corp

Inventors

• Kato Kunihisa
• Mutou Tsuyoshi
• Kondo Takeshi

Classifications

• H01L35/16 Primary

  Electricity · mapped topic

• H01L35/26

  Electricity · mapped topic

• H01L35/34

  Electricity · mapped topic

• H10N10/851

  comprising inorganic compositions · CPC title

• H10N10/85 Primary

  Thermoelectric active materials · CPC title