Pattern forming method, method for manufacturing electronic device, and laminate

Patent metadata

Field	Value
Publication number	US-2018180996-A1
Application number	US-201815904439-A
Country	US
Kind code	A1
Filing date	Feb 26, 2018
Priority date	Sep 30, 2015
Publication date	Jun 28, 2018
Grant date	—

Abstract

The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, and an acid, in which the resin includes a repeating unit represented by General Formula (II). The method for manufacturing an electronic device includes the pattern forming method. A laminate includes the film and the upper layer film.

First claim

What is claimed is:

1 . A pattern forming method comprising:
(a) forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition; (b) forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film; (c) exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon; and (d) developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, wherein the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, or an acid; and
wherein the resin includes a repeating unit represented by General Formula (II),

in the formula (II), X b1 represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom, and
R 2 represents an organic group which has one or more CH 3 partial structures and is stable against an acid.

2 . The pattern forming method according to claim 1 ,
wherein the composition for forming an upper layer film includes an anion represented by General Formula (AN1),

in the formula (AN1), Xf's each independently represent a fluorine atom or an alkyl group substituted with at least one fluorine atom,
R 1 and R 2 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and R 1 's or R 2 's in a case where they are present in plural numbers may be the same as or different from each other,
L represents a divalent linking group, and L's in a case where they are present in plural numbers may be the same as or different from each other,
A represents a cyclic organic group, and
x represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10.

3 . The pattern forming method according to claim 1 ,
wherein the composition for forming an upper layer film includes the compound capable of generating an acid with heat.

4 . The pattern forming method according to claim 1 ,
wherein the composition for forming an upper layer film contains solvents, and the content of a solvent having a hydroxyl group is 50% by mass or less with respect to all the solvents included in the composition for forming an upper layer film.

5 . The pattern forming method according to claim 1 ,
wherein the resin included in the composition for forming an upper layer film further contains a repeating unit having an aromatic ring.

6 . The pattern forming method according to claim 1 ,
wherein the actinic ray-sensitive or radiation-sensitive composition includes a resin containing a repeating unit having an aromatic ring.

7 . The pattern forming method according to claim 1 ,
wherein the developer containing an organic solvent includes at least one solvent selected from the group consisting of an ester-based solvent, a ketone-based solvent, an ether-based solvent, and a hydrocarbon-based solvent.

8 . The pattern forming method according to claim 1 ,
wherein the developer containing an organic solvent includes an ester-based solvent.

9 . The pattern forming method according to claim 1 ,
further comprising (e) rinsing the developed actinic ray-sensitive or radiation-sensitive film using a rinsing liquid after step (d).

10 . The pattern forming method according to claim 9 ,
wherein the rinsing liquid is a rinsing liquid including a hydrocarbon-based solvent.

11 . A method for manufacturing an electronic device, comprising the pattern forming method according to claim 1 .

12 . A laminate comprising:
an actinic ray-sensitive or radiation-sensitive film; and an upper layer film including a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, or an acid, wherein the resin includes a repeating unit represented by General Formula (II),

in the formula (II), X b1 represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom, and
R 2 represents an organic group which has one or more CH 3 partial structures and is stable against an acid.

Assignees

• Fujifilm Corp

Inventors

• Tsubaki Hideaki
• Nihashi Wataru
• Tsuchihashi Toru
• Yamamoto Kei

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/091

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• G03F7/038 Primary

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• G03F7/0758

  with silicon- containing groups in the side chains · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title