Pattern formation methods

Patent metadata

Field	Value
Publication number	US-2016124309-A1
Application number	US-201514927354-A
Country	US
Kind code	A1
Filing date	Oct 29, 2015
Priority date	Oct 31, 2014
Publication date	May 5, 2016
Grant date	—

Abstract

Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

First claim

What is claimed is:

1 . A pattern formation method, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.

2 . The method of claim 1 , wherein the additive polymer comprises a unit containing a silicon atom.

3 . The method of claim 1 , wherein the additive polymer comprises a unit containing a fluorine atom.

4 . The method of claim 3 , wherein the additive polymer comprises a unit containing a fluoroalcohol.

5 . The method of claim 1 , wherein the matrix polymer comprises a unit formed from a monomer of the following general formula (I):

wherein: R 1 is chosen from hydrogen and optionally substituted C1 to C3 alkyl; R 2 is chosen from optionally substituted C1 to C15 alkyl; X 1 is oxygen, sulfur or is represented by the formula NR 3 , wherein R 3 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and Z 1 is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 4 — wherein R 4 is chosen from hydrogen and optionally substituted C1 to C10 alkyl.

6 . The method of claim 1 , wherein the additive polymer is formed from a monomer having the following general formula (II) or (III):

wherein: R 10 is chosen from hydrogen and optionally substituted C1 to C3 alkyl; R 11 is chosen from optionally substituted C1 to C15 alkyl; X 2 is oxygen, sulfur or is represented by the formula NR 12 , wherein R 12 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and Z 3 is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —NHSO 2 —, —COO— and —CONR 13 — wherein R 13 is chosen from hydrogen and optionally substituted C1 to C10 alkyl;

wherein: R 14 is chosen from hydrogen and optionally substituted C1 to C3 alkyl; R 15 is independently chosen from optionally substituted C1 to C15 alkyl; X 3 is oxygen, sulfur or is represented by the formula NR 16 , wherein R 16 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; Z 4 is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 17 —, wherein R 17 is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and n is an integer from 0 to 2.

7 . The method of claim 1 , wherein the basic quencher comprises a basic moiety on the matrix polymer.

8 . The method of claim 1 , wherein the basic quencher comprises an additive separate from the matrix polymer.

9 . The method of claim 1 , wherein the additive polymer is present in the overcoat composition in an amount of from 3 to 15 wt % based on total solids of the overcoat composition.

10 . The method of claim 1 , wherein the photoresist layer is exposed to the activating radiation in an immersion lithography process.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Lee Choong-Bong
• Caporale Stefan J
• Desisto Jason A
• Park Jong Keun
• Liu Cong
• Xu Cheng-Bai
• Andes Cecily

Classifications

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title

• C08F220/281

  and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate · CPC title

• G03F7/2041 Primary

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title