Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material film

Patent metadata

Field	Value
Publication number	US-2018155372-A1
Application number	US-201715827317-A
Country	US
Kind code	A1
Filing date	Nov 30, 2017
Priority date	Dec 2, 2016
Publication date	Jun 7, 2018
Grant date	—

Abstract

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I):

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a Cl to C4 linear or branched alkyl group.

First claim

1 . A tin compound represented by Chemical Formula (I):

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

2 . The tin compound as claimed in claim 1 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

3 . The tin compound as claimed in claim 1 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

4 . The tin compound as claimed in claim 3 , wherein R 1 and R 2 are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

5 . The tin compound as claimed in claim 4 , wherein R 1 and R 2 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

6 . The tin compound as claimed in claim 1 , wherein:
R 1 and R 2 are each a methyl group, and Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group or an isopropyl group.

7 . The tin compound as claimed in claim 1 , wherein the tin compound is in a liquid state at 20° C.

8 . A tin precursor compound for atomic layer deposition (ALD), the tin precursor compound having a structure represented by Chemical Formula (I):

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

9 . The tin precursor compound as claimed in claim 8 , wherein R 1 and R 2 are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

10 . The tin precursor compound as claimed in claim 9 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

11 .- 30 . (canceled)

31 . The tin precursor compound as claimed in claims 9 , R1 and R2 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

32 . The tin precursor compound as claimed in claim 8 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

33 . The tin precursor compound as claimed in claim 8 , wherein:
R 1 and R 2 are each a methyl group, and Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group or an isopropyl group.

34 . The tin precursor compound as claimed in claim 8 , wherein the tin compound is in a liquid state at 20° C.

35 . A tin precursor compound for depositing tin-containing material film, the tin precursor compound having a structure represented by Chemical Formula (I):
<Chemical Formula (I)>

wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a C1 to C4 linear or branched alkyl group.

36 . The tin precursor compound as claimed in claim 35 , wherein Q 1 , Q 2 , Q 3 , and Q 4 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

37 . The tin precursor compound as claimed in claim 35 , wherein R 1 and R 2 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group.

38 . The tin precursor compound as claimed in claim 35 , wherein the tin compound is in a liquid state at 20° C.

39 . The tin precursor compound as claimed in claim 35 , wherein the tin precursor compound is Sn[N( i Pr) 2 ] 2 Me 2 or Sn[N(Me) 2 ] 2 Me 2 .

40 . The tin precursor compound as claimed in claim 35 , wherein the tin precursor compound is synthesized by a method comprising:
obtaining SnX 2 R 2 by reacting SnX 4 with SnR 4 according to Reaction Formula (I); and obtaining Sn(NQ 2 ) 2 R 2 by reacting SnX 2 R 2 with LiNQ 2 according to Reaction Formula (II),
SnX 4 +SnR 4 →2SnX 2 R 2   <Reaction Formula (I)>

SnX 2 R 2 +2LiNQ 2 →Sn(NQ 2 ) 2 R 2 +2LiX   <Reaction Formula (II)>

wherein: X includes fluorine, chlorine, bromine, or iodine, and R and Q are each independently a C1 to C4 linear or branched alkyl group.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Ryu Seung-Min
• Kim Youn-Soo
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Jeon Sang-Yong

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F7/2284 Primary

  Compounds with one or more Sn-N linkages · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/407

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title