Semiconductor device and manufacturing method thereof
US-9224792-B2 · Dec 29, 2015 · US
US2018138410A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018138410-A1 |
| Application number | US-201815869597-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 12, 2018 |
| Priority date | Jul 17, 2015 |
| Publication date | May 17, 2018 |
| Grant date | — |
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A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.
Opening claim text (preview).
1 . A metal mask substrate comprising a metal obverse surface configured such that a resist is placed on the obverse surface, wherein the obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm, and the obverse surface has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm. 2 . The metal mask substrate according to claim 1 , wherein the obverse surface is a first surface, the resist is a first resist, the metal mask substrate further comprises a metal second surface, which is a surface opposite to the first surface and configured such that a second resist is placed on the second surface, the second surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm, and the second surface has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm. 3 . The metal mask substrate according to claim 1 , wherein the obverse surface is made of Invar. 4 . The metal mask substrate according to claim 1 , further comprising a metal layer, which is made of Invar, wherein the obverse surface is an obverse surface of the metal layer, and the metal mask substrate further comprises a polyimide layer, which faces a surface of the metal layer that is opposite to the obverse surface. 5 . The metal mask substrate according to claim 1 , wherein the resist is a dry film resist, and the obverse surface is configured such that the dry film resist is affixed to the obverse surface. 6 . A metal mask comprising a metal mask base including a metal obverse surface, wherein the metal mask base includes a plurality of through-holes, which extend through the metal mask base in a thickness direction of the metal mask base and have openings in the obverse surface, and (B/A)×100(%) is less than or equal to 10%, where A represents an average of dimensions of the openings in a plan view of the obverse surface, and B represents a value obtained by multiplying a standard deviation of the dimensions by 3. 7 . A method for manufacturing a metal mask comprising: preparing a metal mask substrate that includes a metal obverse surface, which is configured such that a resist is placed on the obverse surface, wherein the obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm and a three-dimensional surface roughness Sz of less than or equal to 3.17 μm; placing a resist on the obverse surface; forming through-holes in the resist for forming a plurality of depressions in the metal mask substrate, wherein the depressions extend in a thickness direction of the metal mask substrate and have openings in the obverse surface; and forming the depressions in the metal mask substrate through the resist, wherein the forming the depressions in the metal mask substrate includes forming the depressions in the metal mask substrate such that (B/A)×100(%) is less than or equal to 10%, where A represents an average of dimensions of the openings in a plan view of the obverse surface, and B represents a value obtained by multiplying a standard deviation of the dimensions by 3.
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