Thermally conductive silicone composition, production method thereof, and semiconductor device
US-12104113-B2 · Oct 1, 2024 · US
US2017338166A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017338166-A1 |
| Application number | US-201715429930-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 10, 2017 |
| Priority date | May 20, 2016 |
| Publication date | Nov 23, 2017 |
| Grant date | — |
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Provided herein is a structure having desirable heat dissipation, particularly a structure having high far-infrared emissivity. An electronic component including such a structure, and an electronic device including the electronic component are also provided. The structure includes a water-based coating material containing inorganic fillers that include a first filler and a second filler. The first filler is an oxide containing at least two elements selected from the group consisting of aluminum, magnesium, and silicon, and has a specific surface area of 7 m 2 /g to 50 m 2 /g, and a hydrophobic group on a filler surface. The second filler has a head conductivity of 30 W/m·K or more.
Opening claim text (preview).
What is claimed is: 1 . A structure comprising a water-based coating material containing inorganic fillers that include a first filler and a second filler, wherein the first filler is an oxide containing at least two elements selected from the group consisting of aluminum, magnesium, and silicon, and has a specific surface area of 7 m 2 /g to 50 m 2 /g, and a hydrophobic group on a filler surface, and wherein the second filler has a heat conductivity of 30 W/m·K or more. 2 . The structure according to claim 1 , wherein the structure has a film-like shape, and the first filler and the second filler each have a concentration gradient in a thickness direction of the film-like shape. 3 . The structure according to claim 1 , wherein the first filler has a particle size of 0.6 μm to 10 μm, and the second filler has a particle size of 10 μm to 100 μm. 4 . The structure according to claim 1 , wherein the structure includes the inorganic fillers in an amount of 66.3 volume % to 85.2 volume % with respect to a total volume of the structure. 5 . An electronic component comprising the structure of claim 1 . 6 . An electronic device comprising the electronic component of claim 5 . 7 . An electronic component including a film comprising the structure of claim 1 layered thereon, wherein a concentration of the first filler becomes smaller toward the electronic device, and a concentration of second fillers becomes larger toward the heat generating device.
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