Methods of fabricating silicon-on-insulator (soi) semiconductor devices using blanket fusion bonding

Patent metadata

Field	Value
Publication number	US-2017330792-A1
Application number	US-201715663078-A
Country	US
Kind code	A1
Filing date	Jul 28, 2017
Priority date	Mar 15, 2013
Publication date	Nov 16, 2017
Grant date	—

Abstract

A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

First claim

What is claimed is:

1 . A method comprising:
oxidizing a surface of a first semiconductor wafer to produce an oxidized layer having an oxidized surface, the first semiconductor wafer having a base layer; degenerately doping the first semiconductor wafer through the oxidized layer to produce a doped region; doping the oxidized surface to provide a doped skin; bonding an oxidized second semiconductor wafer to the doped skin; removing the base layer from the first semiconductor wafer to expose a portion of the doped region; and patterning the exposed portion of the doped region to define a piezoresistive pattern on the exposed portion.

2 . The method of claim 1 , wherein the doped region is blanket doped.

3 . The method of claim 1 , wherein the doped region is P++ boron doped.

4 . The method of claim 1 , wherein the bonding occurs between about 800° C. and 1200° C.

5 . The method of claim 1 , further comprising defining a diaphragm member in the oxidized second semiconductor wafer.

6 . The method of claim 1 , wherein the oxidized second semiconductor wafer has a thickness that is determined based on a desired pressure range.

7 . The method of claim 1 , wherein the oxidized layer has a thickness of about 200 angstroms or less.

8 . The method of claim 1 , wherein the oxidized second semiconductor wafer has an oxide layer that is thicker than the oxidized layer of the first semiconductor wafer.

9 . The method of claim 1 , wherein the exposed portion of the doped region is patterned using RIE-reactive ion etching techniques.

10 . The method of claim 1 , wherein the exposed portion of the doped region is patterned using wet etching techniques.

11 . The method of claim 1 , wherein the degenerate doping is done through diffusion.

12 . The method of claim 1 , wherein the bonding of the oxidized surface of the first semiconductor wafer to the oxidized second semiconductor layer occurs without annealing the oxidized surface of the first semiconductor wafer.

13 . A method for fabricating a silicon-on-insulator device, comprising:
bonding a first semiconductor wafer, having a base layer, a degenerately doped layer disposed on the base layer, and a first oxidized layer disposed on the doped layer, to a second semiconductor wafer having a second oxidized layer disposed thereon, wherein the degenerately doped layer is doped to a generally uniform depth through the oxidized layer, and further wherein the bond is between the first oxidized layer and the second oxidized layer; removing, without using a buried oxide etch stop, the base layer of the first semiconductor wafer to expose the doped layer; and patterning the exposed doped layer to define a piezoresistive pattern on the exposed doped layer.

14 . The method of claim 13 , wherein the doped layer is blanket doped.

Assignees

• Kulite Semiconductor Products Inc

Inventors

• Ned Alexander A
• Stefanescu Sorin
• Vandeweert Joseph R

Classifications

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P90/1906

  Preparing SOI wafers · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title