Method of forming a micro-structure

US2017267520A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017267520-A1
Application numberUS-201715616174-A
CountryUS
Kind codeA1
Filing dateJun 7, 2017
Priority dateOct 21, 2010
Publication dateSep 21, 2017
Grant date

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars.

First claim

Opening claim text (preview).

1 . A method of forming a micro-structure, comprising: forming a multi-layered structure including i) an oxidizable material layer established on a substrate and ii) an other oxidizable material layer established on the oxidizable material layer, the oxidizable material layer being formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1; forming a template from the other oxidizable material layer, the template including a plurality of pores; growing a nano-pillar inside each of the plurality of pores, wherein the nano-pillar has a predefined length that terminates at an end; selectively removing a portion of the template to form a substantially even plane that is oriented in a position opposed to the substrate; depositing a material on at least a portion of the substantially even plane to form a film layer; and selectively removing a remaining portion of the template to expose the plurality of nano-pillars. 2 . The method as defined in claim 1 wherein the forming of the template and the growing of the nano-pillars are accomplished via anodization using any of oxalic acid, sulfuric acid, phosphoric acid, chromic acid or mixtures thereof as an electrolyte. 3 . The method as defined in claim 1 wherein the forming of the plurality of pores in the other oxidizable material layer is accomplished by anodizing the other oxidizable material layer, and wherein the growing of the nano-pillars is accomplished by anodizing the oxidizable material layer. 4 . The method as defined in claim 3 , further comprising tuning at least one of a height, a pitch, a diameter, or an aspect ratio of each of the nano-pillars by adjusting at least one parameter of an anodizing process used to grow the nano-pillars. 5 . The method as defined in claim 4 wherein the adjusting further tunes a gap between adjacent nano-pillars. 6 . The method as defined in claim 1 wherein prior to selectively removing the remaining portion of the template, the method further comprises selectively patterning the film layer to remove a portion of the film layer from the substantially even plane. 7 . The method as defined in claim 1 wherein prior to selectively removing the remaining portion of the template, the method further comprises selectively patterning the film layer, the nano-pillars, and the pores to form a micro-cluster. 8 . The method as defined in claim 1 , further comprising controlling a mass of the micro-structure by adjusting at least one of a thickness of the film layer or a lateral area of the film layer. 9 .- 15 . (canceled) 16 . A micro-structure, comprising: a substrate; a non-oxidized portion of an oxidizable material layer formed on the substrate; an oxide layer formed on the non-oxidized portion and from the oxidizable material layer; metal oxide nano-pillars extending from the oxide layer and formed from the oxidizable material layer, wherein each of the plurality of nano-pillars has a length that terminates at an end such that the plurality of nano-pillars ends, together, defines a substantially even plane oriented in a position that is opposed to the substrate; an empty space separating each nano-pillar from each adjacent nano-pillar; and a film layer formed on at least a portion of the substantially even plane; wherein matter larger than the respective spaces between the adjacent nano-pillars is to be selectively removed from a gas stream directed to flow laterally through the nano-pillars. 17 . The micro-structure as defined in claim 16 , further comprising a gas sensor in operative communication with the micro-structure. 18 . The micro-structure as defined in claim 16 wherein the film layer has a thickness ranging in size from about 10 nm to about 5 μm. 19 . The micro-structure as defined in claim 16 wherein the film layer has a thickness ranging in size from about 20 nm to about 500 μnm. 20 . The micro-structure as defined in claim 16 wherein the nano-pillars comprise an amorphous oxide material.

Assignees

Inventors

Classifications

  • Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] · CPC title

  • Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes (B81B5/00 takes precedence) · CPC title

  • Shaping or removal of materials, e.g. etching · CPC title

  • of refractory metals or alloys based thereon · CPC title

  • Nanostructures, e.g. using aluminium anodic oxidation templates [AAO] · CPC title

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What does patent US2017267520A1 cover?
A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a templat…
Who is the assignee on this patent?
Hewlett Packard Development Co Lp
What technology area does this patent fall under?
Primary CPC classification C25D11/045. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Sep 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).