Fabrication of correlated electron material devices method to control carbon

Patent metadata

Field	Value
Publication number	US-2017244032-A1
Application number	US-201615048244-A
Country	US
Kind code	A1
Filing date	Feb 19, 2016
Priority date	Feb 19, 2016
Publication date	Aug 24, 2017
Grant date	—

Abstract

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

First claim

1 . A method comprising:
in a chamber, exposing a substrate to one or more gases comprising a transition metal oxide, a transition metal, a transition metal compound or any combination thereof, and a first ligand, the one or more gases comprising an atomic concentration of a ligand comprising carbon so as to bring about an atomic concentration of carbon in a fabricated correlated electron material of between 0.1% and 10.0%; exposing the substrate to a gaseous oxide to form a first layer of a film of the correlated electron material; and repeating the exposing of the substrate to the one or more gases and to the gaseous oxide wherein the repeated cycles use oxidizers that may differ in species or flow rate for the purpose of controlling the incorporated dopant in the structure and are repeated a sufficient number of times so as to form additional layers of the film of the correlated electron material, the film of the correlated electron material exhibiting a first impedance state and a second impedance state substantially dissimilar from one another.

2 . The method of claim 1 , wherein the first layer of the film of correlated electron material comprises an electron back-donating material.

3 . The method of claim 2 , wherein the electron back-donating material comprises, carbonyl (CO), ammonia (NH 3 ), ethylene diamine (C 2 H 8 N 2 ), nitric oxide (NO), nitrogen dioxide (NO 2 ), an NO 3 ligand, an amine, an amide or an alkylamide, cyano (CN − ), phen(1,10-phenanthroline) (C 12 H 8 N 2 ), bipyridine (C 10 ,H 8 N 2 ), ethylenediamine ((C 2 H 4 (NH 2 ) 2 ), pyridine (C 5 H 5 N), acetonitrile (CH 3 CN), and cyanosulfanides such as thiocyanate (NCS − ) or any combination thereof.

4 . The method of claim 1 , further comprising purging the chamber of the one or more gases for between 5.0 seconds and 180.0 seconds.

5 . The method of claim 1 , wherein the exposing the substrate to one or more gases occurs over a duration of between 5.0 seconds and 180.0 seconds.

6 . The method of claim 1 , further comprising repeating the exposing of the substrate between 50 and 900 times.

7 . The method of claim 6 , further comprising repeating the exposing of the substrate until a thickness of the film of the correlated electron material reaches between 1.5 nm and 150.0 nm.

8 . The method of claim 1 , wherein the one or more gases comprises nickel amidinate (Ni(AMD)), nickel dicyclopentadienyl (Ni(Cp) 2 ), nickel diethylcyclopentadienyl (Ni(EtCp) 2 ), Bis(2,2,6,6-tetramethylheptane-3,5-dionato)Ni(II) (Ni(thd) 2 ), nickel acetylacetonate (Ni(acac) 2 ), bis(methylcyclopentadienyl)nickel (Ni(CH 3 C 5 H4) 2 , Nickel dimethylglyoximate (Ni(dmg) 2 ), Nickel 2-amino-pent-2-en-4-onato (Ni(apo) 2 ), Ni(dmamb) 2 where dmamb=1-dimethylamino-2-methyl-2-butanolate, Ni(dmamp) 2 where dmamp=1-dimethylamino-2-methyl-2-propanolate, Bis(pentamethylcyclopentadienyl) nickel (Ni(C 5 (CH 3 ) 5 ) 2 , and nickel carbonyl (Ni(CO) 4 ), just to name a few examples; organometallic compounds of other transition or lanthanide metals will be apparent from this list or any combination thereof, in a gaseous state.

9 . The method of claim 1 , wherein the gaseous oxide comprises one or more of oxygen (O 2 ), ozone (O 3 ), nitric oxide (NO), hydrogen peroxide (H 2 O 2 ), nitric oxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), or a source from the nitrogen oxide family (N x O y ), or precursors with an NO 3 − ligand; plasma activated species of the prior molecules.

10 . The method of claim 1 , wherein the exposing of the substrate to one or more of gases and exposing the substrate to the gaseous oxide occurs at a temperature of between 20.0° and 1000.0° C.

11 . The method of claim 1 , additionally comprising annealing the exposed substrate in the chamber.

12 . The method of claim 11 , further comprising raising a temperature of the chamber to between 20.0° C. and 900.0° C. prior to initiating the annealing.

13 . The method of claim 11 , wherein the exposed substrate is annealed in an environment comprising one or more of gaseous nitrogen (N 2 ), hydrogen (H 2 ), oxygen (O 2 ), water or steam (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), ozone (O 3 ), argon (Ar), helium (He), ammonia (NH 3 ), carbon monoxide (CO), methane (CH 4 ), acetylene (C 2 H 2 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ) or butane (C 4 H 10 ), or any combination thereof.

14 . A film deposited on a substrate, comprising:
a correlated electron material utilizing carbon to provide electron back-donation, the carbon comprising an atomic concentration of between 0.1% and 10.0%, the film having an approximate thickness of between 1.0 nm and 100.0 nm and exhibiting a ratio of a first resistance state to a second resistance state of at least 5.0:1.0 in response to a voltage of between of 0.1 V and 10.0 V to be applied across a thickness dimension of the film.

15 . The film deposited on the substrate according to claim 14 , wherein the voltage to be applied is between 0.6 V and 1.5 V, and wherein the correlated electron material comprises a thickness of between 10.0 nm and 50.0 nm.

16 . The film deposited on the substrate according to claim 14 , wherein the correlated electron material comprises between 10 and 1000 atomic layers.

17 . The film deposited on the substrate according to claim 14 , wherein at least 50.0% of the substrate comprises a nitride material.

18 . A switching device, comprising:
a correlated electron material utilizing a carbon-based material in an atomic concentration of between 0.1% and 10.0% as an electron back-donating material, the correlated electron material deposited between two or more conductive electrodes, the correlated electron material having a thickness of between 1.0 nm and 100.0 nm and to exhibit a ratio of a first resistance state relative to a second resistance state of at least 5.0:1.0 in response to a voltage of between 0.1 V and 10.0 V to be applied across at least two of the two or more conductive electrodes.

19 . The switching device of claim 18 , wherein the correlated electron material comprises a thickness of between 10.0 nm and 50.0 nm and wherein the voltage to be applied across the at least two of the two or more conductive electrodes is to be between 0.6 V and 1.5 V.

20 . The switching device of claim 18 , wherein the correlated electron material comprises a thickness of between 1.5 nm and 150.0 and is deposited on electrode materials of titanium nitride, platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, tungsten nitride, cobalt silicide, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver, iridium, or any combination thereof.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Reid Kimberly Gay
• Shifren Lucian

Classifications

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/406 Primary

  of iron group metals · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• H01L49/003 Primary

  Electricity · mapped topic

• H10N70/8833 Primary

  Binary metal oxides, e.g. TaOx · CPC title