Doped metal germanide and methods for making the same

Patent metadata

Field	Value
Publication number	US-9634106-B2
Application number	US-201514815633-A
Country	US
Kind code	B2
Filing date	Jul 31, 2015
Priority date	Dec 19, 2008
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

First claim

We claim:

1. A method for forming a doped metal germanide, comprising:
providing a substrate having at least one exposed germanium region;
depositing a metal oxide film comprising a first metal over the exposed germanium region;
depositing a dopant film comprising a second metal over the exposed germanium region and
heating the substrate to form the doped metal germanide film over the exposed germanium region using first metal from the metal oxide film, second metal from the dopant film and germanium from the exposed germanium region;
wherein depositing the primary metal oxide comprises conducting a plurality of primary metal oxide atomic layer deposition cycles, wherein each of the plurality of primary metal oxide atomic layer deposition cycles comprises alternately and sequentially contacting the substrate with a vapor phase primary metal source and a vapor phase metal oxide deposition cycle oxygen source.

2. The method of claim 1 , wherein heating comprises reducing the metal oxide film to metal.

3. The method of claim 2 , wherein the first metal reacts with germanium from the at least one exposed germanium region.

4. The method of claim 1 , wherein the metal oxide film comprises an oxide of a metal selected from the group consisting of: Ni, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Co, Cu, Fe, Ru, Ir, Rh, Pd and Pt.

5. The method of claim 4 , wherein the metal oxide comprises nickel oxide.

6. The method of claim 5 , wherein the doped metal germanide is a doped nickel germanide.

7. The method of claim 1 , wherein the exposed germanium region comprises epitaxial germanium.

8. A method for forming a doped metal germanide film, comprising:
providing a substrate having at least one exposed germanium region;
depositing a primary metal oxide and a dopant metal oxide over the exposed germanium region; and
forming the doped metal germanide film over the exposed germanium region using a primary metal from the metal oxide and a dopant metal from the dopant oxide wherein forming the doped metal germanide film comprises reducing the primary metal oxide to form the primary metal and reducing the dopant metal oxide to form the dopant metal,
wherein depositing the primary metal oxide comprises conducting a plurality of primary metal oxide atomic layer deposition cycles, wherein each of the plurality of primary metal oxide atomic layer deposition cycles comprises alternately and sequentially contacting the substrate with a vapor phase primary metal source and a vapor phase primary metal oxide deposition cycle oxygen source.

9. The method of claim 8 , wherein depositing the dopant metal oxide comprises conducting a plurality of dopant metal oxide atomic layer deposition cycles, wherein each of the plurality of dopant metal oxide atomic layer deposition cycles comprises alternately and sequentially contacting the substrate with a vapor phase dopant metal source and a vapor phase dopant metal oxidant.

10. The method of claim 9 , wherein depositing the dopant metal oxide is prior to depositing the primary metal oxide.

11. The method of claim 9 , wherein depositing the dopant metal oxide is subsequent to depositing the primary metal oxide.

12. The method of claim 8 , wherein forming the doped metal germanide film further comprises reacting the primary metal and the dopant metal with germanium from the at least one exposed germanium region.

13. The method of claim 12 , wherein each of reducing the primary metal oxide, reducing the dopant metal oxide, and reacting the primary metal and the dopant metal with the germanium comprises heating.

14. The method of claim 13 , wherein heating for reducing the primary metal oxide, heating for reducing the dopant metal oxide, and heating for reacting the primary metal and the dopant metal with the germanium are performed simultaneously.

15. The method of claim 8 , wherein the dopant metal oxide comprises platinum oxide.

16. The method of claim 8 , wherein the primary metal oxide comprises nickel oxide.

17. The method of claim 8 , wherein the doped metal germanide film comprises a doped NiGe film.

18. The method of claim 8 , wherein the doped metal germanide film is a platinum doped nickel NiGe.

Assignees

• Asm Int Nv

Inventors

• Pore Viljami J
• Haukka Suvi P
• Blomberg Tom E
• Tois Eva E

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P32/30

  Diffusion for doping of conductive or resistive layers · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title