Fabrication of correlated electron material devices

Patent metadata

Field	Value
Publication number	US-2017213961-A1
Application number	US-201715463546-A
Country	US
Kind code	A1
Filing date	Mar 20, 2017
Priority date	Jan 26, 2016
Publication date	Jul 27, 2017
Grant date	—

Abstract

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

First claim

1 - 20 . (canceled)

21 . A method comprising:
exposing a substrate, in a chamber, to a first precursor in a gaseous state, the first precursor comprising a transition metal oxide, a transition metal, a transition metal compound, or any combination thereof, and a first ligand; exposing the substrate to a second precursor in a gaseous state, the second precursor comprising an oxide so as to form a first layer of a film of correlated electron material; and repeating the exposing of the substrate to the first and second precursors a sufficient number of times so as to form additional layers of the film of correlated electron material, the film of correlated electronic material exhibiting a first impedance state and a second impedance state, the first impedance state and the second impedance state to be substantially dissimilar from one another, at least 90% of the atomic concentration of the film of correlated electron material comprises the transition metal, the transition metal oxide, the transition metal compound or any combination thereof.

22 . The method of claim 21 , wherein the film of correlated electron material comprises an electron back-donating material in an atomic concentration of between 0.1% and 10.0%.

23 . The method of claim 22 , wherein the electron back-donating material comprises carbonyl.

24 . The method of claim 21 , further comprising purging the chamber of the first precursor for between 0.5 seconds and 180.0 seconds.

25 . The method of claim 21 , wherein the exposing the substrate to the first precursor occurs over a duration of between 0.5 seconds and 180.0 seconds.

26 . The method of claim 21 , further comprising repeating the exposing of the substrate between 50 and 900 times.

27 . The method of claim 21 , further comprising repeating the exposing of the substrate until a thickness of the film of correlated electron material reaches between 1.5 nm and 150.0 nm.

28 . The method of claim 21 , the first precursor comprising nickel amidinate (Ni(AMD)), nickel dicyclopentadienyl (Ni(Cp)2), nickel diethylcyclopentadienyl (Ni(EtCp)2), Bis(2,2,6,6-tetramethylheptane-3,5-dionato)Ni(II) (Ni(thd)2), nickel acetylacetonate (Ni(acac)2), bis(methylcyclopentadienyl)nickel (Ni(CH3C5H4)2), nickel dimethylglyoximate (Ni(dmg)2), nickel 2-amino-pent-2-en-4-onato (Ni(apo)2), Ni(dmamb)2 (in which dmamb=1-dimethylamino-2-methyl-2-butanolate), Ni(dmamp)2 (in which dmamp=1-dimethylamino-2-methyl-2-propanolate), Bis(pentamethylcyclopentadienyl)nickel (Ni(C5(CH3)5)2) or nickel carbonyl (Ni(CO)4), or any combination thereof.

29 . The method of claim 21 , wherein the second precursor comprises oxygen (O2), ozone (O3), water (H2O), nitric oxide (NO), nitrous oxide (N2O) or hydrogen peroxide (H2O2), or any combination thereof.

30 . The method of claim 21 , wherein the exposing of the substrate to the first precursor, the exposing of the substrate to a second precursor, or any combination thereof, occurs at a temperature of between 20.0° and 1000.0° C.

31 . The method of claim 21 , additionally comprising annealing the exposed substrate in the chamber.

32 . The method of claim 31 , further comprising raising the temperature of the chamber to between 20.0° C. and 900.0° C. prior to initiating the annealing.

33 . The method of claim 31 , wherein the exposed substrate is annealed in an environment comprising gaseous nitrogen (N2), hydrogen (H2), oxygen (O2), water or steam (H2O), nitric oxide (NO), nitrous oxide (N2O), nitrogen dioxide (NO2), ozone (O3), argon (Ar), helium (He), ammonia (NH3), carbon monoxide (CO), methane (CH4), acetylene (C2H2), ethane (C2H6), propane (C3H8), ethylene (C2H4) or butane (C4H10), or any combination thereof.

34 . The method of claim 21 , wherein the transition metal comprises aluminum, cadmium, chromium, cobalt, copper, gold, iron, manganese, mercury, molybdenum, nickel, palladium, rhenium, ruthenium, silver, tin, titanium, vanadium, or zinc.

35 . A method comprising:
exposing a conductive substrate, in a chamber, to a first gaseous precursor, the first gaseous precursor comprising a transition metal oxide, a transition metal, a transition metal compound, or any combination thereof, and a first ligand; exposing the conductive substrate to a second gaseous precursor, the second precursor comprising an oxide, to form a first layer of a film of correlated electron material; and repeating the exposing of the conductive substrate to the first and second gaseous precursors to form additional layers of the film of correlated electron material, the film of correlated electronic material exhibiting a first impedance state that is substantially dissimilar from a second impedance state.

36 . The method of claim 35 , wherein the conductive substrate comprises titanium, platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, cobalt, ruthenium, chromium, gold, palladium, indium tin, tantalum, silver, iridium, metal alloys thereof or conductive metal oxides thereof, or conductive oxides of metal alloys thereof.

37 . The method of claim 35 , wherein the film of correlated electron material comprises an electron back-donating material in an atomic concentration of between 0.1% and 10.0%.

38 . The method of claim 37 , wherein the electron back-donating material comprises carbonyl.

39 . The method of claim 35 , wherein the transition metal comprises aluminum, cadmium, chromium, cobalt, copper, gold, iron, manganese, mercury, molybdenum, nickel, palladium, rhenium, ruthenium, silver, tin, titanium, vanadium, or zinc.

40 . The method of claim 35 , wherein the first gaseous precursor comprises one or more of nickel amidinate (Ni(AMD)), nickel dicyclopentadienyl (Ni(Cp)2), nickel diethylcyclopentadienyl (Ni(EtCp)2), Bis(2,2,6,6-tetramethylheptane-3,5-dionato)Ni(II) (Ni(thd)2), nickel acetylacetonate (Ni(acac)2), bis(methylcyclopentadienyl)nickel (Ni(CH3C5H4)2), nickel dimethylglyoximate (Ni(dmg)2), nickel 2-amino-pent-2-en-4-onato (Ni(apo)2), Ni(dmamb)2 (in which dmamb=1-dimethylamino-2-methyl-2-butanolate), Ni(dmamp)2 (in which dmamp=1-dimethylamino-2-methyl-2-propanolate), Bis(pentamethylcyclopentadienyl)nickel (Ni(C5(CH3)5)2) or nickel carbonyl (Ni(CO)4), or any combination thereof.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Paz De Araujo Carlos Alberto
• Reid Kimberly Gay
• Shifren Lucian

Classifications

• H01L45/146

  Electricity · mapped topic

• H01L45/1641

  Electricity · mapped topic

• H01L45/1253

  Electricity · mapped topic

• H01L45/1616 Primary

  Electricity · mapped topic

• C23C16/56

  After-treatment · CPC title