Seal ring and method for manufacturing seal ring
US-2015342072-A1 · Nov 26, 2015 · US
US2017233884A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017233884-A1 |
| Application number | US-201715461866-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 17, 2017 |
| Priority date | Jan 28, 2014 |
| Publication date | Aug 17, 2017 |
| Grant date | — |
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A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.
Opening claim text (preview).
What is claimed is: 1 . A method of manufacturing a Cu core ball, comprising: providing a Cu ball as an inside ball, said Cu ball having a degree of purity of Cu equal to or higher than 99.9% and equal to or less than 99.995%, a contained amount of U equal to or less than 5 ppb, a contained amount of Th equal to or less than 5 ppb, a total contained amount of Pb and/or Bi equal to or larger than 1 ppm, and a sphericity equal to or higher than 0.95; surrounding the inside ball with a solder plating film of a lead free solder alloy whose primary component is Sn; thereafter, placing the inside ball, surrounded by the solder plating film, into a quantity of a plating solution and irradiating the inside ball, the solder plating film, and the plating solution with an ultrasonic wave for a predetermined time, thereby providing a Cu core ball having an arithmetic roughness equal to or less than 0.3 μm. 2 . The method of claim 1 wherein the lead free solder alloy contains no more than 5 ppb of U and no more than 5 ppb of Th. 3 . The method of claim 2 including performing the step of irradiating for a predetermined time that is great enough to provide an arithmetic roughness equal to or less than 0.22 μm. 4 . The method of claim 2 including the step of covering the inside ball with a plating layer comprising at least one element selected from the group consisting of Ni and Co before performing the step of surrounding the inside ball with a solder plating film. 5 . The method of claim 2 , wherein said Cu core ball has an alpha dose equal to or less than 0.0200 cph/cm 2 . 6 . The method of claim 1 including performing the step of irradiating for a predetermined time that is great enough to provide an arithmetic roughness equal to or less than 0.22 μm. 7 . The method of claim 6 including the step of covering the inside ball with a plating layer comprising at least one element selected from the group consisting of Ni and Co before performing the step of surrounding the inside ball with a solder plating film. 8 . The method of claim 6 , wherein said Cu core ball has an alpha dose equal to or less than 0.0200 cph/cm 2 . 9 . The method of claim 1 including the step of covering the inside ball with a plating layer comprising at least one element selected from the group consisting of Ni and Co before performing the step of surrounding the inside ball with a solder plating film. 10 . The method of claim 9 wherein said Cu core ball has an alpha dose equal to or less than 0.0200 cph/cm 2 . 11 . The method of claim 1 , wherein said Cu core ball has an alpha dose equal to or less than 0.0200 cph/cm 2 .
comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title
of outermost layers of multilayered bumps, e.g. material of a coating · CPC title
Plan-view shape, i.e. in top view · CPC title
Metallic particles coated with metal · CPC title
characterised by the structure of the outermost layers, e.g. multilayered coatings · CPC title
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