Electric Assembly Including an Insulated Gate Bipolar Transistor Device and a Wide-Bandgap Transistor Device
US-2017366180-A1 · Dec 21, 2017 · US
Drive unit of semiconductor element
US2017194954A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017194954-A1 |
| Application number | US-201615357135-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 21, 2016 |
| Priority date | Jan 5, 2016 |
| Publication date | Jul 6, 2017 |
| Grant date | — |
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Abstract
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A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.
First claim
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1 . A drive unit of a semiconductor element comprising: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor. 2 . The drive unit of the semiconductor element according to claim 1 , comprising: a discharge resistor which is connected in parallel to the capacitor and has a larger resistance value compared to the resistor. 3 . The drive unit of the semiconductor element according to claim 1 , wherein the switch element is an npn-type bipolar transistor. 4 . The drive unit of the semiconductor element according to claim 1 , wherein the switch element is a series circuit of a diode and an n-channel MOSFET.
Assignees
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Classifications
without feedback from the output circuit to the control circuit · CPC title
in composite switches · CPC title
Means reducing energy consumption · CPC title
- H03K17/0826Primary
in bipolar transistor switches · CPC title
with pulse width modulation · CPC title
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- What does patent US2017194954A1 cover?
- A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected…
- Who is the assignee on this patent?
- Fuji Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H03K17/0826. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).