Preheat Processes for Millisecond Anneal System

Patent metadata

Field	Value
Publication number	US-2017194220-A1
Application number	US-201615377121-A
Country	US
Kind code	A1
Filing date	Dec 13, 2016
Priority date	Dec 30, 2015
Publication date	Jul 6, 2017
Grant date	—

Abstract

Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

First claim

What is claimed is:

1 . A preheat process for a millisecond anneal system;
receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system, the processing chamber divided into a top chamber and a bottom chamber; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; applying a preheat recipe to heat the wafer support plate based at least in part on the one or more temperature measurements of the wafer support plate.

2 . The preheat process of claim 1 , wherein the wafer support plate comprises a quartz material.

3 . The preheat process of claim 1 , wherein the substrate comprises a dummy semiconductor substrate.

4 . The preheat process of claim 1 , wherein applying a preheat recipe to heat the wafer support plate based at least in part on the one or more temperature measurements of the wafer support plate comprises applying the preheat recipe to heat the wafer support plate until the temperature of the wafer support plate reaches a pre-set temperature.

5 . The preheat process of claim 4 , wherein when the wafer support plate reaches the pre-set temperature, the process comprises:
stopping the preheat recipe; applying a process recipe to a second substrate in the processing chamber, the process recipe being different from the preheat recipe.

6 . The preheat process of claim 1 , wherein the preheat recipe specifies heating the wafer support plate and the substrate using one or more continuous mode lamps located proximate to the bottom processing chamber in the millisecond anneal system.

7 . The preheat process of claim 6 , wherein the one or more continuous mode lamps are controlled based at least in part on the one or more temperature measurements of the wafer support plate

8 . The preheat process of claim 1 , wherein the temperature sensor comprises a pyrometer having a measurement temperature associated with wavelengths greater than about 4 μm.

9 . The preheat process of claim 1 , wherein the temperature sensor is located in the bottom chamber and has a field of view of the wafer support plate without obstruction by a water window of the millisecond anneal system.

10 . A temperature measurement system for a millisecond anneal system, the system comprising:
a far infrared temperature sensor configured to obtain one or more temperature measurements of a substrate in a millisecond anneal system at process temperatures of less than about 450° C., the millisecond anneal system comprising a processing chamber having a wafer plane plate, the wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber; a processing circuit configured to process measurements from the temperature sensor to determine a temperature of the substrate at temperatures of less than about 450° C.

11 . The temperature measurement system of claim 10 , wherein the far infrared temperature sensor comprises a pyrometer associated with a spectral range of about 8 μm to about 14 μm.

12 . The temperature measurement system of claim 10 , wherein the far infrared temperature sensor is mounted in a corner of the top chamber of a millisecond anneal system.

13 . The temperature measurement system of claim 12 , wherein the far infrared temperature sensor is unobstructed by a water window of the millisecond anneal system.

14 . The temperature measurement system of claim 10 , wherein the temperature measurement system further comprises a second temperature sensor configured to measure a temperature of a wafer support plate in the millisecond anneal system, the second temperature sensor located in the bottom processing chamber and having a field of view of the wafer support plate.

15 . A preheat process for a millisecond anneal system, the preheat process comprising:
obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system, the millisecond anneal system having a processing chamber divided into a top processing chamber and a bottom processing chamber; applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements; wherein there is no substrate located on the wafer support plate during application of the pulsed heat recipe.

16 . The preheat process of claim 15 , wherein the wafer support plate comprises a quartz material.

17 . The preheat process of claim 15 , wherein applying a pulsed preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate comprises applying the preheat recipe to heat the wafer support plate until the temperature of the wafer support plate reaches a pre-set temperature.

18 . The preheat process of claim 17 , wherein when the wafer support plate reaches the pre-set temperature, the process comprises:
stopping the preheat recipe; applying a process recipe to a second substrate in the processing chamber, the process recipe being different from the preheat recipe.

19 . The preheat process of claim 15 , wherein the pulsed preheat recipe specifies a plurality of pulses of heating light.

20 . The preheat process of claim 15 , wherein the temperature sensor comprises a pyrometer having a measurement temperature associated with wavelengths greater than about 4 μm.

Assignees

• Mattson Tech Inc

Inventors

• Lieberer Markus
• Pfahler Christian
• Hagedorn Markus
• vanAbbema Michael
• Cosceev Alexandr

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title