Semiconductor device inspection device and semiconductor device inspection method

Patent metadata

Field	Value
Publication number	US-2017176521-A1
Application number	US-201715447525-A
Country	US
Kind code	A1
Filing date	Mar 2, 2017
Priority date	Feb 1, 2013
Publication date	Jun 22, 2017
Grant date	—

Abstract

A semiconductor device inspection system includes a laser light source for generating light to be irradiated a semiconductor device, an optical sensor for detecting the light reflected by the semiconductor device and outputting the detection signal, a tester unit for applying a operating signal to the semiconductor device, an electricity measurement unit to which the detection signal is input, an electricity measurement unit to which the detection signal and the operating signal are selectively input, and a switching unit having a detection signal terminal and a operating signal terminal. The switching unit inputs the detection signal to the electricity measurement unit by connecting a connection section to the detection signal terminal and inputs the operating signal by connecting the connection section to the operating signal terminal.

First claim

1 - 12 . (canceled)

13 : A system for inspecting a semiconductor device serving as a device under test,
the system comprising: a light source configured to generate light to be irradiated the semiconductor device; a light detector configured to detect the light reflected by the semiconductor device and output a detection signal; a first electricity measurement unit electrically coupled to the light detector, to which the detection signal is input; and a second electricity measurement unit electrically coupled to the light detector, to which the detection signal is input.

14 : The system according to claim 13 , wherein the first electricity measurement unit configured to measure a first amplitude having a first frequency, and
the second electricity measurement unit configured to measure a second amplitude having a second frequency different from the first frequency.

15 : The system according to claim 13 , wherein the first electricity measurement unit and the second electricity measurement unit configured to measure amplitudes of components of a complex wave.

16 : The system according to claim 13 , further comprising an operating signal application unit configured to apply a first operating signal having a first modulation frequency and a second operating signal having a second modulation frequency different from the first modulation frequency to the semiconductor device.

17 : The system according to claim 16 , further comprising an output signal processing unit electrically coupled to the first electricity measurement unit and the second electricity measurement unit, and configured to set a first measurement frequency band on the first modulation frequency and a second measurement frequency based on the second modulation frequency.

18 : The system according to claim 13 , wherein the first electricity measurement unit and the second electricity measurement unit comprise a spectrum analyzer.

19 : The system according to claim 13 , wherein the first electricity measurement unit and the second electricity measurement unit comprise a lock-in amplifier.

20 : The system according to claim 13 , wherein the first electricity measurement unit and the second electricity measurement unit comprise an oscilloscope.

21 : The system according to claim 13 , further comprising an amplifier electrically coupled to the light detector, to which the detection signal is input.

22 : A method for inspecting a semiconductor device serving as a device under test, the method comprising:
generating light irradiated to the semiconductor device; detecting the light reflected by the semiconductor device and outputting the detection signal; and inputting the detection signal to a first electricity measurement unit and a second electricity measurement unit.

23 : The method according to claim 22 , further comprising measuring a first amplitude having a first frequency by the first electricity measurement unit and measuring a first amplitude having a second frequency different from the first frequency by second electricity measurement unit.

24 : The method according to claim 22 , further comprising measuring amplitudes of components of a complex wave by the first electricity measurement and second electricity measurement unit.

25 : The method according to claim 22 , further comprising applying a first operating signal having a first modulation frequency and a second operating signal having a second modulation frequency different from the first modulation frequency to the semiconductor device.

26 : The method according to claim 25 , further comprising setting a first measurement frequency band based on the first modulation frequency and a second measurement frequency band based on the second modulation frequency.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Nakamura Tomonori
• Nishizawa Mitsunori

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R23/16

  Spectrum analysis; Fourier analysis · CPC title

• G01N2201/12

  Circuits of general importance; Signal processing · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01R31/311 Primary

  of integrated circuits {(G01R31/31728 takes precedence)} · CPC title