Crystal growth methods and devices
US-2025198047-A1 · Jun 19, 2025 · US
US2017175293A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017175293-A1 |
| Application number | US-201515325483-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 14, 2015 |
| Priority date | Jul 15, 2014 |
| Publication date | Jun 22, 2017 |
| Grant date | — |
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Provided are printed patterns and objects including, for example, a film or 3D object, which may include one or more nanorods. According to the subject matter provided, the nanorods may reduce or diminish inter-particle interaction in the pattern or object.
Opening claim text (preview).
1 .- 67 . (canceled) 68 . A printed pattern composed of multiple material layers, each of said layers comprising a plurality of nanorods, the nanorods being selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra, and wherein the plurality of nanorods are configured to exhibit in the pattern a reduced or diminished inter-particle interaction, wherein the printed pattern is selected from a film and a 3D object. 69 . The printed pattern according to claim 68 , the pattern being composed of multiple material layers, each of said layers comprising a plurality of nanorods, the nanorods being selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra, and wherein the plurality of nanorods are configured to adapt in the pattern an inter-particle distance controllable to a reduced or diminished inter-particle interaction. 70 . The printed pattern according to claim 68 , wherein the pattern is a 3D object or a film. 71 . A printed pattern composed of multiple material layers, each of said layers comprising a plurality of nanorods, the nanorods being selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra, and wherein the plurality of nanorods are configured to adapt in the pattern a seed-to-seed distance larger than a FRET distance associated with said nanorods, to affect a reduced or diminished inter-particle interaction, the pattern being optionally selected from a film and a 3D object. 72 . The printed pattern according to claim 68 , wherein the seeded nanorods are selected amongst elongated nanoparticles embedding a seed element of a different material composition. 73 . The printed pattern according to claim 72 , wherein the seed element is selected from an elongated element, a spherical element, a core/shell element and a core/multishell element. 74 . The printed pattern according to claim 73 , wherein the seed is a non-core/shell structure selected from an elongated element and a spherical element, the element being of a material composition different than the material composition of the nanorod embedding the seed. 75 . The printed pattern according to claim 74 , wherein the seed is a core/shell or a core/multishell element, wherein the core and/or any one of the shells may independently have a spherical or an elongated shape. 76 . The printed pattern according to claim 68 , wherein the ratio seed diameter to nanorod length is between 1:2.1 and 1:3, between 1:3 and 1:6, or between 1:6 and 1:10. 77 . The printed pattern according to claim 68 , wherein the seed has a size of less than 3 nm. 78 . The printed pattern according to claim 68 , wherein the nanorod material and the seed material is of a semiconducting material. 79 . The printed pattern according to claim 68 , wherein the nanorod material and/or the seed material comprising a semiconductor material. 80 . The printed pattern according to claim 68 , wherein the nanorod material and/or seed material is a semiconductor material selected from elements of Group I-VII, Group II-VI, Group III-V, Group IV-VI, Group III-VI, and Group IV semiconductors and combinations thereof. 81 . The printed pattern according to claim 80 , wherein the material is or comprises an element of Group IV. 82 . The printed pattern according to claim 68 , wherein the seed material is different from the nanorod material. 83 . The printed pattern according to claim 68 , being in the form of a multilayered stacked arrangement. 84 . A process for forming a pattern of a plurality of seeded nanorods, the process comprising ink-jetting a formulation/dispersion of the seeded nanorods onto a surface region; wherein the nanorods are selected to have substantially reduced overlap between the nanorods' absorption spectra and the nanorods' emission spectra, the ink-jetting being configured to form a pattern of the nanorods, the pattern composed of a number of printed layers and exhibiting at least one of reduced or diminished re-absorption and reduced or diminished inter-particle interaction. 85 . A device implementing at least one patterned film according to claim 68 .
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