Semiconductor structure with template for transition metal dichalcogenides channel material growth
US-9349806-B2 · May 24, 2016 · US
Preparation of nanorods
US10113112B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10113112-B2 |
| Application number | US-201615201365-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 1, 2016 |
| Priority date | Jul 2, 2015 |
| Publication date | Oct 30, 2018 |
| Grant date | Oct 30, 2018 |
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Abstract
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A method of preparing a core-shell nanorod can include growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution, wherein the core-shell nanorod includes a M1X1 core.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of preparing a core-shell nanorod comprising growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution to a suspension of M1X1 nanocrystals to form the shell in a first shell growth step, and, after stopping the first shell growth step, further growing the shell of the core-shell nanorod (M1X1)M2X2 in the solution through a slow-injection of M2 precursor solution and X2 precursor solution to a suspension of M1X1 nanocrystals to form a thicker shell in a second shell growth step and, wherein the core-shell nanorod includes a M1X1 core. 2. The method of claim 1 , wherein the core nanocrystal includes CdSe. 3. The method of claim 1 , wherein the shell includes CdS. 4. The method of claim 1 , wherein the solution includes an acid. 5. The method of claim 1 , wherein the solution includes an amine. 6. The method of claim 1 , further including degassing the solution. 7. The method of claim 1 , further including growing the core-shell nanorod at a temperature of no higher than 310° C. 8. The method of claim 1 , wherein the slow-injection rate of M2 precursor is less than 0.4 mmol per hour. 9. The method of claim 1 , wherein the slow-injection rate of X2 precursor is less than 0.4 mmol per hour. 10. The method of claim 1 , wherein the M2 precursor solution includes 1-octadecene. 11. The method of claim 1 , wherein the X2 precursor solution includes 1-octadecene. 12. The method of claim 1 , wherein concentration of the M2 precursor is between 0.05 M-0.20 M. 13. The method of claim 1 , wherein concentration of the X2 precursor is between 0.07 M-0.30 M.
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Classifications
AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te} · CPC title
Manufacture or treatment of nanostructures · CPC title
the crystallising materials being formed by chemical reactions in the solution · CPC title
Cadmium sulfide · CPC title
- C09K11/883Primary
with zinc or cadmium · CPC title
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- What does patent US10113112B2 cover?
- A method of preparing a core-shell nanorod can include growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution, wherein the core-shell nanorod includes a M1X1 core.
- Who is the assignee on this patent?
- Massachusetts Inst Technology
- What technology area does this patent fall under?
- Primary CPC classification C09K11/883. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 30 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).