Semiconductor reaction chamber with plasma capabilities
US-2015024609-A1 · Jan 22, 2015 · US
US2017162366A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017162366-A1 |
| Application number | US-201514962558-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 8, 2015 |
| Priority date | Dec 8, 2015 |
| Publication date | Jun 8, 2017 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A film forming apparatus includes a lower electrode, an upper electrode provided above and in opposition to the lower electrode and having a plurality of openings, a transport tube which provides a passage extending generally in a vertical direction and connecting to a space above the upper electrode, a gas supply line connected to a side surface of the transport tube and providing a passage communicating with a space in the transport tube, and a gas diffuser gate valve connected to a portion of the side surface of the transport tube at a position lower in the vertical direction than the position at which the gas supply line is connected, wherein the gas diffuser gate valve has a diffusion plate which blocks part of the space in the transport tube.
Opening claim text (preview).
What is claimed is: 1 . A film forming apparatus comprising: a lower electrode; an upper electrode provided above and in opposition to the lower electrode and having a plurality of openings; a transport tube which provides a passage extending generally in a vertical direction and connecting to a space above the upper electrode; a gas supply line connected to a side surface of the transport tube and providing a passage communicating with a space in the transport tube; and a gas diffuser gate valve connected to a portion of the side surface of the transport tube at a position lower in the vertical direction than the position at which the gas supply line is connected, wherein the gas diffuser gate valve has a diffusion plate which blocks part of the space in the transport tube. 2 . The film forming apparatus according to claim 1 , wherein the gas diffuser gate valve has a drive device which puts the diffusion plate in the transport tube and retracts the diffusion plate from the transport tube. 3 . The film forming apparatus according to claim 1 , wherein a plurality of holes are formed in the diffusion plate. 4 . The film forming apparatus according to claim 3 , wherein a width of each of the plurality of holes at a lower surface of the diffusion plate is larger than its width at an upper surface of the diffusion plate. 5 . The film forming apparatus according to claim 4 , wherein each of the plurality of holes has a horn-like sectional shape. 6 . The film forming apparatus according to claim 1 , wherein the gas diffusion gate valve has an O-ring set in a groove in the diffusion plate, and the O-ring contacts the transport tube. 7 . The film forming apparatus according to claim 1 , further comprising an remote plasma unit gate valve connected to a portion of the side surface of the transport tube at a position higher in the vertical direction than the position at which the gas supply line is connected, wherein the remote plasma unit gate valve has a blocking plate which blocks the space in the transport tube, and wherein the remote plasma unit gate valve has a drive device which puts the blocking plate in the transport tube and retracts the blocking plate from the transport tube. 8 . The film forming apparatus according to claim 1 , wherein the gas diffuser gate valve has an auxiliary diffusion plate differing in open-area percentage from the diffusion plate; and a drive device which puts one of the diffusion plate and the auxiliary diffusion plate in the transport tube and retracts the one of the diffusion plate and the auxiliary diffusion plate from the transport tube. 9 . The film forming apparatus according to claim 1 , further comprising a remote plasma unit connected to an upper end of the transport tube and arranged to provide a gas in a plasma state. 10 . The film forming apparatus according to claim 1 , further comprising a mass flow controller connected to the gas supply line. 11 . The film forming apparatus according to claim 1 , further comprising a fixed top plate provided above the upper electrode, wherein the space above the upper electrode is a space enclosed with the upper electrode and the fixed top plate. 12 . A computer-readable recording medium on which a program is recorded and which is readable with a computer, the program causing the computer to execute: a film forming step including supplying a gas into a transport tube from a gas supply line connected to a side surface of the transport tube in which a passage extending generally in a vertical direction is provided, diffusing the gas by setting in the transport tube a diffusion plate blocking part of a space in the transport tube, and thereafter supplying the gas to a substrate on a lower electrode below an upper electrode through openings in the upper electrode; a chamber cleaning step of cleaning a chamber surrounding the lower electrode by supplying a gas into the transport tube while setting the diffusion plate out of the transport tube; and a diffusion plate cleaning step of cleaning the diffusion plate by supplying a gas into the transport tube while setting the diffusion plate in the transport tube. 13 . The recording medium according to claim 12 , wherein the film forming step further includes closing an remote plasma unit gate valve connected to a portion of the side surface of the transport tube at a position higher in the vertical direction than the position at which the gas supply line is connected, and wherein each of the chamber cleaning step and the diffusion plate cleaning step further includes opening the remote plasma unit gate valve. 14 . A film forming method comprising a film forming step including supplying a gas into a transport tube from a gas supply line connected to a side surface of the transport tube in which a passage extending generally in a vertical direction is provided, diffusing the gas by setting in the transport tube a diffusion plate blocking part of a space in the transport tube, and thereafter supplying the gas to a substrate on a lower electrode through openings in an upper electrode. 15 . The film forming method according to claim 14 , wherein, in the transport tube, pressure in a space above the diffusion plate is higher than pressure in a space below the diffusion plate. 16 . The film forming method according to claim 14 , further comprising: a chamber cleaning step of cleaning a chamber surrounding the lower electrode by supplying a gas into the transport tube while setting the diffusion plate out of the transport tube; and a diffusion plate cleaning step of cleaning the diffusion plate by supplying a gas into the transport tube while setting the diffusion plate in the transport tube.
Generation remote from the workpiece, e.g. down-stream · CPC title
Gas control, e.g. control of the gas flow · CPC title
CVD [Chemical Vapor Deposition] · CPC title
using internal electrodes · CPC title
In situ cleaning of vessels and/or internal parts · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.