Target material for sputtering and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-2017130328-A1
Application number	US-201515321863-A
Country	US
Kind code	A1
Filing date	Jun 25, 2015
Priority date	Jul 3, 2014
Publication date	May 11, 2017
Grant date	—

Abstract

Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material ( 3, 13 ) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface ( 5, 15 ) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface ( 5, 15 ) has an arithmetic mean roughness Ra of 0.9 μm or more, a maximum height Rz of 10.0 μm or less, and Rz JIS roughness of 7.0 μm or less. A sputtering target ( 1, 11 ) is obtained by bonding the obtained target material ( 3, 13 ) to a backing body ( 2, 12 ) by way of a bonding layer ( 4, 14 ).

First claim

What is claimed is:

1 . A target material for sputtering composed of an oxide sintered body and having a sputtering surface, the surface roughness of the sputtering surface having an arithmetic mean roughness Ra of 0.9 μm or more, a maximum height Rz of 10.0 μm or less, and a 10-point mean roughness Rz JIS of 7.0 μm or less.

2 . The target material for a sputtering surface according to claim 1 , wherein the arithmetic mean roughness Ra is within the range 0.9 μm to 1.5 μm, the maximum height Rz is within the range 5.0 μm to 10.0 μm, and the 10-point mean roughness Rz JIS is within the range 4.0 μm to 7.0 μm.

3 . A manufacturing method for a target material for sputtering, comprising a processing process of obtaining a target material for sputtering by processing a material that is composed of an oxide sintered body; wherein in the processing process, rough grinding using a grindstone having a specified grade is performed on a surface of the target material for sputtering of the material that will become the sputtering surface, after which zero grinding is performed so that the surface roughness of the sputtering surface has an arithmetic mean roughness Ra of 0.9 μm or more, a maximum height Rz of 10.0 μm or less, and a 10-point mean roughness Rz JIS of 7.0 μm or less.

4 . The manufacturing method for a target material for sputtering according to claim 3 , wherein rough grinding and zero grinding are performed so that the arithmetic mean roughness Ra is within the range 0.9 μm to 1.5 μm, the maximum height Rz is within the range 5.0 μm to 10.0 μm, and the 10-point mean roughness Rz JIS is within the range 4.0 μm to 7.0 μm.

5 . The manufacturing method for a target material for sputtering according to claim 3 , wherein the rough grinding is performed using a grindstone having a grade within the range #100 to #170, and the zero grinding is performed using a grindstone having a grade within the range #140 to #400.

6 . The manufacturing method for a target material for sputtering according to claim 3 , wherein the rough grinding is performed by dividing rough grinding into two to four grindings.

7 . The manufacturing method for a target material for sputtering according to claim 3 , wherein the zero grinding is performed by dividing zero grinding into two to six grindings.

8 . The manufacturing method for a target material for sputtering according to claim 3 , wherein after the rough grinding and before the zero grinding, a finish grinding that is divided into one to four grindings is performed using a grindstone having a grade within the range #140 to #400.

9 . A sputtering target comprising a backing body, and a target material for sputtering that is bonded to the backing body by way of a bonding layer, wherein the target material for sputtering is the target material for sputtering of claim 1 .

10 . The sputtering target according to claim 9 , wherein the target material for sputtering comprises plural target material segments.

11 . The sputtering target according to claim 9 , wherein the backing body comprises a cylindrical backing tube, and the target material for sputtering has a cylindrical shape.

12 . A manufacturing method for a sputtering target that comprises plural target material segments that are arranged adjacent to each other, wherein the target material for sputtering according to claim 1 is used for each of the plural target material segments; the manufacturing method comprising a bonding process of bonding the plural target material segments to a backing body so that spacing between end surfaces of adjacent target material segments that face each other is no less than 0.1 mm and no greater than 1.0 mm.

Assignees

• Sumitomo Metal Mining Co

Inventors

• Ozawa Makoto
• Ando Isao

Classifications

• C04B37/021

  in a direct manner, e.g. direct copper bonding [DCB] · CPC title

• H01J37/3491

  Manufacturing of targets · CPC title

• C04B35/64

  Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F}) · CPC title

• H01J37/3423

  Shape · CPC title

• C04B2235/3293

  Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO] · CPC title