Island etched filter passages
US-2016346714-A1 · Dec 1, 2016 · US
US2017128890A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017128890-A1 |
| Application number | US-201515322682-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 17, 2015 |
| Priority date | Jun 30, 2014 |
| Publication date | May 11, 2017 |
| Grant date | — |
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An object is to form a hole having a desired size accurately and uniformly in a carbon nanomaterial used for a filter or the like, such as a graphene, a carbon nanotube, or a carbon nanohorn. Provided is a method for perforating a carbon nanomaterial for forming a hole having a desired size in a carbon nanomaterial, characterized in that the carbon nanomaterial is heated and held at a low temperature in the air containing oxygen of 160 to 250° C. for a predetermined time and that a hole having a desired size is thereby formed uniformly in the carbon nanomaterial by controlling a length of heating time.
Opening claim text (preview).
1 . A method for perforating a carbon nanomaterial for forming a hole having a desired size in the carbon nanomaterial, wherein the carbon nanomaterial is heated and held at a low temperature in the air containing oxygen of 200 to 250° C. for a predetermined time. 2 . A method for producing a filter molded article having a graphene layer as a filtering material, comprising: attaching a support layer having a water passage hole perforated in advance to the graphene layer formed on an initial substrate for a graphene; and forming a water passage hole by heating and holding the graphene layer at a low temperature in the air containing oxygen of 160 to 250° C. for a predetermined time. 3 . The method for producing a filter molded article according to claim 2 , wherein the support is a film resist, and the method includes exposing the film resist to light and stabilizing the film resist. 4 . The method for producing a filter molded article according to claim 2 , wherein the step of forming a water passage hole by heating and holding the graphene layer at a low temperature is performed in the air containing oxygen of 200 to 250° C.
Specified use of nanostructure · CPC title
Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30 · CPC title
by micromachining techniques, e.g. using masking and etching steps, photolithography · CPC title
having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title
for carbon nanotubes or fullerenes · CPC title
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