Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
US-10078059-B2 · Sep 18, 2018 · US
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Patent family 36938894
This patent family groups 3 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 36938894 |
| Family type | — |
| Earliest priority | Jun 23, 2005 |
| First filing country | US |
| Member publications | 3 |
| Countries | US |
| Representative publication | US10078059B2 — Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
Representative publication
Best representative member for this family based on priority and filing country.
US10078059B2 — Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same (published Sep 18, 2018)
Member publications
Related publications in this family.
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
US-2017115239-A1 · Apr 27, 2017 · US
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
US-9570540-B2 · Feb 14, 2017 · US